Stable visible photo- and electroluminescence from nanocrystalline silicon thin films fabricated on thin SiO2 layers by low pressure chemical vapour deposition

Physica Status Solidi (A) Applied Research

Volumn 165, Issue 1, 1998, Pages 79-85

  Nassiopoulou, A G ^a   Ioannou Sougleridis, V ^a   Photopoulos, P ^a   Travlos, A ^b   Tsakiri, V ^a   Papadimitriou, D ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

^c NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; FILM PREPARATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SILICA; THERMOOXIDATION; THIN FILMS; VOLTAGE MEASUREMENT;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING FILMS;

EID: 0031647178     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199801)165:1<79::AID-PSSA79>3.0.CO;2-F     Document Type: Article

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