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Volumn 4, Issue 9, 2011, Pages 3346-3350

Heteroepitaxial film crystal silicon on Al 2O 3: New route to inexpensive crystal silicon photovoltaics

(19) Teplin, Charles W a Paranthaman, M Parans b Fanning, Thomas R c Alberi, Kirstin a Heatherly, Lee b Wee, Sung Hun b Kim, Kyunghoon b List, Frederick A b Pineau, Jerry c Bornstein, Jon c Bowers, Karen c Lee, Dominic F b Cantoni, Claudia b Hane, Steve c Schroeter, Paul c Young, David L a Iwaniczko, Eugene a Jones, Kim M a Branz, Howard M a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b OAK RIDGE NATIONAL LABORATORY (United States)

c Ampulse Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL ORIENTATION; C-SI SOLAR CELL; CRYSTAL SILICON; CRYSTALLOGRAPHIC DEFECTS; DEFECT PASSIVATION; DEPOSITION TEMPERATURES; FABRICATION COST; GRAIN SIZE; HETEROEPITAXIAL; HETEROEPITAXIAL FILMS; HIGH EFFICIENCY; HOT WIRE CHEMICAL VAPOR DEPOSITION; LIGHT-TRAPPING; PHOTOVOLTAICS; SAPPHIRE WAFER; SILICON LAYER; SRTIO; WAFER SUBSTRATES;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DEFECTS; EPITAXIAL GROWTH; FABRICATION; LATTICE MISMATCH; METAL FOIL; METALS; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; PASSIVATION; PHOTOVOLTAIC EFFECTS; SILICON; SILICON SOLAR CELLS; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

CRYSTAL; CRYSTALLOGRAPHY; FUEL CELL; PHOTOVOLTAIC SYSTEM; SILICON; SOLAR POWER; SUBSTRATE; TRANSMISSION ELECTRON MICROSCOPY; VAPORIZATION;

EID: 80052229123 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c1ee01555a Document Type: Article

Times cited : (36)

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