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Volumn 354, Issue 19-25, 2008, Pages 2513-2518
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Nanocrystalline silicon TFT process using silane diluted in argon-hydrogen mixtures
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Author keywords
73.63.Bd; 81.15.Gh; 85.35. p; Atomic force and scanning tunneling microscopy; Chemical vapor deposition; Conductivity; Crystal growth; Crystallization; Devices; Diffraction and scattering measurements; Electrical and electronic properties; Films and coatings; Microcrystallinity; Microstructure; Nanocrystals; Nanoparticles; Optical spectroscopy; Plasma deposition; Raman scattering; Thin film transistors
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Indexed keywords
CRYSTAL GROWTH;
CRYSTALLIZATION;
ELECTRONIC PROPERTIES;
GAS MIXTURES;
METASTABLE PHASES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RAMAN SCATTERING;
SILANES;
THIN FILM TRANSISTORS;
ARGON HYDROGEN MIXTURES;
DEPOSITION RATE;
FILMS DEPOSITION;
NANOCRYSTALLINE SILICON;
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EID: 42649092104
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2007.10.074 Document Type: Article |
Times cited : (33)
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References (14)
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