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Volumn 354, Issue 19-25, 2008, Pages 2513-2518

Nanocrystalline silicon TFT process using silane diluted in argon-hydrogen mixtures

Author keywords

73.63.Bd; 81.15.Gh; 85.35. p; Atomic force and scanning tunneling microscopy; Chemical vapor deposition; Conductivity; Crystal growth; Crystallization; Devices; Diffraction and scattering measurements; Electrical and electronic properties; Films and coatings; Microcrystallinity; Microstructure; Nanocrystals; Nanoparticles; Optical spectroscopy; Plasma deposition; Raman scattering; Thin film transistors

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRONIC PROPERTIES; GAS MIXTURES; METASTABLE PHASES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SILANES; THIN FILM TRANSISTORS;

EID: 42649092104     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.10.074     Document Type: Article
Times cited : (33)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.