Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 6, 2012, Pages 1080-1084

  Zhang, Lin ^a   Gao, Junhua ^a   Xiao, Jinquan ^a   Wen, Lishi ^a   Gong, Jun ^a   Sun, Chao ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

Author keywords

hydrogen concentration; microstructure; nanocrystalline silicon; Raman spectra

Indexed keywords

ARGON FLOW RATE; ATOMIC HYDROGEN; CRYSTALLINITIES; GROWTH OF FILMS; HYDROGEN CONCENTRATION; HYDROGENATED NANOCRYSTALLINE SILICON; IONIZED ARGON; NC-SI:H; ORDERED STRUCTURES; STRUCTURAL CHARACTERIZATION; SUBSTRATE TEMPERATURE; TETRACHLOROSILANE;

CHEMICAL VAPOR DEPOSITION; HYDROGEN; HYDROGENATION; IONIZATION OF GASES; METALLIC FILMS; MICROSTRUCTURE; NANOCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING;

ARGON;

EID: 84862221545     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127598     Document Type: Article

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