Enhanced visible photoluminescence from nc-Si/SiOx films deposited by electron beam evaporation

Journal of Non-Crystalline Solids

Volumn 356, Issue 50-51, 2010, Pages 2790-2793

  Yang, Yang ^a   Xu, Ling ^a   Yang, Fei ^a   Liu, Wenqiang ^a   Xu, Jun ^a   Ma, Zhongyuan ^a   Chen, Kunji ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Amorphous silicon; Electron beam evaporation; Nanocrystalline silicon; Photoluminescence; Silicon oxide

Indexed keywords

AMORPHOUS SILICON (A-SI); AVERAGE DIAMETER; ELECTRON BEAM EVAPORATION; FOURIER TRANSFORM INFRARED; FTIR; INTERMEDIATE STATE; MATRIX; NANOCRYSTALLINES; PHOTOLUMINESCENCE SIGNALS; SI SUBSTRATES; VISIBLE PHOTOLUMINESCENCE;

AMORPHOUS FILMS; ANNEALING; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; FOURIER TRANSFORMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALLINE SILICON; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON OXIDES; THIN FILMS; VACUUM EVAPORATION;

AMORPHOUS SILICON;

EID: 78449265208     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.09.038     Document Type: Article

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