Optimization of intrinsic hydrogenated amorphous silicon deposited by very high-frequency plasma-enhanced chemical vapor deposition using the relationship between Urbach energy and silane depletion fraction for solar cell application

Thin Solid Films

Volumn 547, Issue , 2013, Pages 256-262

  Shin, Chonghoon ^a   Iftiquar, S M ^a   Park, Jinjoo ^a   Kim, Youngkuk ^a   Baek, Seungshin ^a   Jang, Juyeon ^a   Kim, Minbum ^a   Jung, Junhee ^a   Lee, Younjung ^a   Kim, Sangho ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Intrinsic amorphous silicon; SiH3 radical; Silane depletion fraction; Urbach energy; VHF PECVD

Indexed keywords

DEPOSITION PRECURSORS; DEPOSITION PRESSURES; PHOTOVOLTAIC CONVERSION; SIH3 RADICAL; SOLAR-CELL APPLICATIONS; URBACH ENERGY; VERY HIGH FREQUENCY PLASMA; VHF-PECVD;

DEPOSITION; HYDROGENATION; OPEN CIRCUIT VOLTAGE; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SOLAR CELLS; VAPORS;

AMORPHOUS SILICON;

EID: 84886799361     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.01.023     Document Type: Conference Paper

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