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Volumn 66, Issue 1-4, 2001, Pages 163-170

Performance of p-type silicon-oxide windows in amorphous silicon solar cell

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; FILM PREPARATION; INFRARED RADIATION; LIGHT ABSORPTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM DEVICES;

EID: 0343832173     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00169-0     Document Type: Article
Times cited : (26)

References (11)
  • 8
    • 0019006322 scopus 로고
    • Device physics and design of a-Si ITO/p-i-n heteroface solar cells
    • Okamoto H., Nitta Y., Yamaguchi T., Hamakawa Y. Device physics and design of a-Si ITO/p-i-n heteroface solar cells. Sol. Energy Mate. 2:1980;313.
    • (1980) Sol. Energy Mate. , vol.2 , pp. 313
    • Okamoto, H.1    Nitta, Y.2    Yamaguchi, T.3    Hamakawa, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.