Device-grade amorphous silicon prepared by high-pressure plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1947-1951

  Isomura, Masao ^a,b   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Amorphous silicon; Electrode gap; Growth rate; PECVD; Plasma enhanced chemical vapor deposition; Pressure

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; ELECTRODES; ENERGY GAP; FILM GROWTH; LIGHT ABSORPTION; PARAMAGNETIC RESONANCE; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SUBSTRATES;

ABSORPTION COEFFICIENT; CONSTANT PHOTO-CURRENT METHOD; DEVICE GRADE HYDROGENATED AMORPHOUS SILICON; ELECTRODE GAP; GROWTH RADICALS; HIGH PRESSURE PLASMA;

AMORPHOUS SILICON;

EID: 0036529632     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1947     Document Type: Article

References (8)