Vapor-solid growth of one- dimensional layer-structured gallium sulfide nanostructures

ACS Nano

Volumn 3, Issue 5, 2009, Pages 1115-1120

  Shen, Guozhen ^a,b   Chen, Di ^a   Chen, Po Chiang ^b   Zhou, Chongwu ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b University of Southern California ^*  (United States)

Author keywords

GaS; Nanobelts; Nanowires; Photoluminescence; Semiconductor

Indexed keywords

BAND-GAP SEMICONDUCTORS; CONTROLLED SYNTHESIS; ELECTRICAL SENSORS; EMISSION BANDS; EVAPORATION SOURCE; GALLIUM SULFIDE; GAS PRODUCT; HIGH QUALITY; LAYERED STRUCTURE; MICROBELTS; MICROPLATES; NONLINEAR OPTICAL APPLICATIONS; ONE-DIMENSIONAL LAYERS; SEMICONDUCTOR; SUBSTRATE TEMPERATURE; VAPOR-SOLID GROWTH; VAPOR-SOLID METHOD;

ELECTRIC WIRE; LEAKAGE (FLUID); NANOWIRES; OPTICAL PROPERTIES; OPTICAL SENSORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; VAPORS;

NANOBELTS;

GALLIUM; NANOMATERIAL; SULFIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; GAS; LIGHT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION SCATTERING; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; GALLIUM; GASES; LIGHT; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SCATTERING, RADIATION; SULFIDES; SURFACE PROPERTIES;

EID: 66949179612     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn900133f     Document Type: Article

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