Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Park, Seong Ju ^a   Han, Sang Heon ^a,b   Cho, Chu Young ^a   Lee, Sang Jun ^a   Park, Tae Young ^a   Kim, Tae Hun ^b   Park, Seung Hyun ^c   Won Kang, Sang ^b   Won Kim, Je ^b   Kim, Yong Chun ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; HOLE INJECTION; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LIGHT OUTPUT POWER; MG-DOPED; MG-DOPING; MULTIPLE QUANTUM WELLS; OPTICAL POWER; OUTPUT POWER; PHOTOLUMINESCENCE INTENSITIES; THERMAL STABILITY;

DOPING (ADDITIVES); LIGHT EMISSION; LIGHT EMITTING DIODES; SECONDARY BATTERIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 76449095701     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3302458     Document Type: Article

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