Numerical study on the performance metrics of lightly doped drain and source graphene nanoribbon field effect transistors with double-material-gate

Superlattices and Microstructures

Volumn 64, Issue , 2013, Pages 227-236

  Wang, Wei ^a   Yang, Xiao ^a   Li, Na ^a   Zhang, Lu ^a   Zhang, Ting ^a   Yue, Gongshu ^a  

^a NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Double material gate; GNRFETs; High frequency; LDD; NEGF

Indexed keywords

DOUBLE-MATERIAL-GATE; GNRFETS; HIGH FREQUENCY HF; LDD; NEGF;

CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS;

MATERIALS;

EID: 84886067427     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2013.09.032     Document Type: Article

References (19)

1. A.H. Castro Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, and A.K. Geim The electronic properties of grapheme Rev. Mod. Phys. 81 2009 109 162
2. M.C. Lemme, T.J. Echtermeyer, M. Baus, and H. Kurz A graphene field-effect device IEEE Electron Device Lett. 28 2007 282 284
3. M.C. Lemme Solid State Phenom. 156-158 2010 499 509
4. H. Sarvari, and R. Ghayour Design of GNRFET using different doping profiles near the source and drain contacts Int. J. Electron 99 5 2012 673 682
5. Z. Kordrostami, and M.H. Sheikhi Influence of channel and underlap engineering on the high-frequency and switching performance of CNTFETs IEEE Trans. Nanotechnol. 11 3 2012 526 533
6. R. Grassi, S. Poli, and E. Gnani Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs Solid-State Electron. 53 2009 462 467
7. G.S. Kliros Gate capacitance modeling and width-dependent performance of grapheme nanoribbon transistors Superlatt. Microstruct. 2013 10.1016/j.mee.2013.04.011
8. Maziar Noei, Mahdi Moradinasab, and Morteza Fathipour A computational study of ballistic graphene nanoribbon field effect transistors Physica E 44 2012 1780 1786
9. X.L. Li, X.R. Wang, L. Zhang, S.W. Lee, and H.J. Dai Chemically derived, ultra smooth graphene nanoribbon semiconductors Science 319 2008 1229 1232 (Pubitemid 351323015)
10. M.Y. Han, B. Ozyilmaz, Y.B. Zhang, and P. Kim Energy band-gap engineering of graphene nanoribbons Phys. Rev. Lett. 98 2007 206805 206808
11. Z.H. Chen, Y.M. Lin, M. Rooks, and P. Avouris Graphene nano-ribbon electronics Physica E 40 2007 228 232 (Pubitemid 350102338)
12. Y. Wu, Y. Lin, K. Jenkins, et al., RF performance of short channel graphene field-effect transistor, in: Tech. Dig. Int. Electron. Device Meeting (IEDM), vol. 10, no. 6, 2010, pp. 226-228.
13. Mehdi Saremi, Hamid Niazi, and Arash Yazdanpanah Goharrizi Modeling of lightly doped drain and source graphene nanoribbon field effect transistors Superlatt. Microstruct. 60 2013 67 72
14. Ciby Thomas, S. Haldar, Manoj Khanna, S. Rajesh, K.K. Gupta, and R.S. Gupta Cut off frequency and transit time analysis of lightly doped drain(LDD) MOSFETs Microelectron. Reliab. 38 1998 1955 1961 (Pubitemid 128638472)
15. Y. Klymenko, and O. Shevtsov Analytical tight-binding approach for ballistic transport through armchair graphene ribbons: exact solutions for propagation through step-like and barrier-like potentials Phys. Rev. B 77 9 2008 175419(18)
16. J. Guo, and M.S. Lundstrom A computational study of thin-body, double-gate, Schottky barrier MOSFETs IEEE Trans. Electron Dev. 49 11 2002 1897 1902
17. J. Guo, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom Assessment of high-frequency performance potential for carbon nanotube transistors IEEE Trans. Nanotechnol. 4 6 2005 715 721 (Pubitemid 41729632)
18. G.S. Kliros Influence of density in homogeneity on the quantum capacitance of grapheme nanoribbon filed effect transistors Superlatt. Microstruct. 50 2012 1093 1102
19. Zoheir kordrostami, Hossein Sheikhi, and Abaas Zarifkar Design dependent of cutoff frequency of nanotransistors near the ultimate performance limit Int. J. Modern Phys. B 26 32 2012 1250196 1250210