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Volumn 38, Issue 12, 1998, Pages 1955-1961

Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TRANSIT TIME DEVICES;

EID: 0032308505     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00065-1     Document Type: Article
Times cited : (10)

References (16)
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  • 2
    • 0025464152 scopus 로고
    • An analytic saturation model for drain and substrate currents of conventional and LDD MOSFETs
    • Huang G-S, Wu C-Y. An analytic saturation model for drain and substrate currents of conventional and LDD MOSFETs. IEEE Trans Electron Devices 1990;ED-37:1667-77.
    • (1990) IEEE Trans Electron Devices , vol.ED-37 , pp. 1667-1677
    • Huang, G.-S.1    Wu, C.-Y.2
  • 3
    • 0024733146 scopus 로고
    • An efficient semi empirical model of the I-V characteristics for LDD MOSFETs
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    • (1989) IEEE Trans Electron Devices , vol.ED-36 , pp. 1691-1702
    • Chang, S.S.S.1    Lin, Y.-G.2    Chen, T.-S.3
  • 4
    • 0023366571 scopus 로고
    • An analytic I-V model for LDD MOSFET devices
    • Huang SG, Wu C-Y. An analytic I-V model for LDD MOSFET devices. IEEE Trans Electron Devices 1987;ED-34:1311-22.
    • (1987) IEEE Trans Electron Devices , vol.ED-34 , pp. 1311-1322
    • Huang, S.G.1    Wu, C.-Y.2
  • 5
    • 0020933978 scopus 로고
    • An analytical model for the gate capacitance of small geometry MOS structures
    • Greeneich EM. An analytical model for the gate capacitance of small geometry MOS structures. IEEE Trans Electron Devices 1983;ED-30:1838-9.
    • (1983) IEEE Trans Electron Devices , vol.ED-30 , pp. 1838-1839
    • Greeneich, E.M.1
  • 6
    • 0020269013 scopus 로고
    • A simple model for the overlap capacitance of a VLSI MOS device
    • Shrivastava R, Fitzpatrik K. A simple model for the overlap capacitance of a VLSI MOS device. IEEE Trans Electron Devices 1982;ED-29:1870-5.
    • (1982) IEEE Trans Electron Devices , vol.ED-29 , pp. 1870-1875
    • Shrivastava, R.1    Fitzpatrik, K.2
  • 7
    • 0030290983 scopus 로고    scopus 로고
    • An empirical fringing capacitance dependent threshold voltage model for non-uniformly doped submicron MOSFETs
    • Maneesha Khanna MK, Haldar S, Gupta RS. An empirical fringing capacitance dependent threshold voltage model for non-uniformly doped submicron MOSFETs. Solid State Electronics 1996;39:1687-91.
    • (1996) Solid State Electronics , vol.39 , pp. 1687-1691
    • Maneesha Khanna, M.K.1    Haldar, S.2    Gupta, R.S.3
  • 8
    • 0021785699 scopus 로고
    • Microwave operation of submicrometer channel length silicon MOSFETs
    • Shaver DC. Microwave operation of submicrometer channel length silicon MOSFETs. IEEE Trans Electron Devices Letters 1985;EDL-6:36-9.
    • (1985) IEEE Trans Electron Devices Letters , vol.EDL-6 , pp. 36-39
    • Shaver, D.C.1
  • 10
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    • Analytic and iterative transit time models for VLSI MOSFETs in strong inversion
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    • (1990) IEEE J Solid State Circuits , vol.25 , pp. 1257-1267
    • McMacken, J.R.F.1    Chamberlain, S.G.2
  • 13
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    • Submicrometer lightly doped drain (LDD) MOSFETs: An optimized model for very high cut of frequencies
    • New Delhi
    • Thomas C, Haldar S, Maneesha Khanna MK, Gupta RS. Submicrometer lightly doped drain (LDD) MOSFETs: an optimized model for very high cut of frequencies. Proc Asia Pacific Microwave Conference, New Delhi, 1996:139-142.
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  • 16
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.