Design of GNRFET using different doping profiles near the source and drain contacts

International Journal of Electronics

Volumn 99, Issue 5, 2012, Pages 673-682

  Sarvari, H ^a   Ghayour, R ^a  

^a SHIRAZ UNIVERSITY   (Iran)

Author keywords

doping profile; graphene nanoribbon; Green's function; mode space; ON and OFF currents

Indexed keywords

AMBIPOLAR CONDUCTION; BAND MODEL; COMPUTATIONAL TIME; DOPANT DISTRIBUTION; DOPING PROFILES; ELECTROSTATIC POTENTIALS; GRAPHENE NANO-RIBBON; MODE SPACE; NEAREST NEIGHBOUR; NON EQUILIBRIUM GREEN'S FUNCTION METHOD; OFF-STATE CURRENT; ON STATE CURRENT; ON- AND OFF-CURRENTS; POISSON'S EQUATION; POTENTIAL BARRIERS; SCHRDINGER EQUATIONS; SIMULATION STUDIES; SOURCE AND DRAINS; SUBTHRESHOLD SLOPE; SWITCHING APPLICATIONS;

GREEN'S FUNCTION; INTERFACE STATES; POISSON EQUATION;

FIELD EFFECT TRANSISTORS;

EID: 84859731146     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/00207217.2011.643496     Document Type: Article

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