Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

Superlattices and Microstructures

Volumn 60, Issue , 2013, Pages 67-72

  Saremi, Mehdi ^a   Saremi, Maryam ^b   Niazi, Hamid ^b   Goharrizi, Arash Yazdanpanah ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b Khorram Abad ^*  (Iran)

^c UNIVERSITY OF TEHRAN   (Iran)

Author keywords

Band to band tunneling (BTBT); Graphene nanoribbon field effect transistor (GNRFET); Lightly doped drain and source (LDDS); Nonequilibrium Green's function (NEGF); Power delay product (PDP) parameter; Subthreshold swing (SS)

Indexed keywords

BAND TO BAND TUNNELING; GRAPHENE NANO-RIBBON; LIGHTLY DOPED DRAIN AND SOURCE (LDDS); NON-EQUILIBRIUM GREEN'S FUNCTION; POWER-DELAY PRODUCTS; SUBTHRESHOLD-SWING (SS);

GREEN'S FUNCTION; NANORIBBONS;

FIELD EFFECT TRANSISTORS;

EID: 84878100707     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2013.04.013     Document Type: Article

References (21)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov Electric field effect in atomically thin carbon films Science 306 2004 666 669 (Pubitemid 39440910)
2. J. Guo, and M. Lundstrom Device Simulation of SWNT-FETs in Carbon Nanotube Electronics 2009 Springer-Verlag New York (Chapter 5)
3. S. Heinze, J. Tersoff, and P. Avouris Electrostatic engineering of nanotube transistors for improved performance Appl. Phys. Lett. 83 2003 5038 5040
4. O. Siyuranga, S. Koswatta, D. Nikonov, and M. Lundstrom Computational study of carbon nanotube p-i-n tunnel FETs IEDM Technol. Dig. 2005 518 521 (Pubitemid 46370903)
5. X.L. Li, X.R. Wang, L. Zhang, S.W. Lee, and H.J. Dai Chemically derived, ultrasmooth graphene nanoribbon semiconductors Science 319 2008 1229 1232 (Pubitemid 351323015)
6. M.Y. Han, B. Ozyilmaz, Y.B. Zhang, and P. Kim Energy band-gap engineering of graphene nanoribbons Phys. Rev. Lett. 98 2007 206805 206808
7. Z.H. Chen, Y.M. Lin, M. Rooks, and P. Avouris Graphene nano-ribbon electronics Physica E 40 2007 228 232 (Pubitemid 350102338)
8. K. Nakada, M. Fujita, G. Dresselhaus, and M.S. Dresselhaus Edge state in graphene ribbons: nanometer size effect and edge shape dependence Phys. Rev. B, Condens. Matter. 54 1996 17954 17961
9. V. Barone, O. Hod, and G.E. Scuseria Electronic structure and stability of semiconducting graphene nanoribbons Nano Lett. 6 2006 2748 2754 (Pubitemid 46129565)
10. R. Van Noorden Moving towards a graphene world Nature 442 2006 228 229 (Pubitemid 44114875)
11. W.A. de Heer, C. Berger, E.H. Conrad, P.N. First, R. Murali, and J.D. Meindl Pionics: the emerging science and technology of graphene-based nanoelectronics IEDM Technol. Dig. 2007 199 202
12. Z.H. Chen, Y.M. Lin, M.J. Rooks, and P. Avouris Graphene nanoribbon electronics Phys., E, Low-Dimens. Syst. Nanostruct. 40 2007 228 232
13. Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs IEEE Trans. Electron Dev. 55 2008 2314 2323
14. Y.W. Son, M.L. Cohen, and S.G. Louie Energy gaps in graphene nanoribbons Phys. Rev. Lett. 97 2006 216803 216806
15. S. Datta Nanoscale device modeling: the Green's function method Superlattices Microstruct. 28 2000 253 278 (Pubitemid 32031130)
16. G. Fiori, and G. Iannaccone Simulation of graphene nanoribbon fieldeffect transistors IEEE Electron Dev. Lett. 28 2007 760 762 (Pubitemid 47243564)
17. Y. Ouyang, Y. Yoon, and J. Guo Scaling behaviors of graphene nanoribbon FETs: a three-dimensional quantum simulation study IEEE Trans. Electron Dev. 54 2007 2223 2231 (Pubitemid 351485740)
18. G.C. Liang, N. Neophytou, M.S. Lundstrom, and D.E. Nikonov Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: a full real-space quantum transport simulation J. Appl. Phys. 102 2007 054307 054313
19. X. Guan, M. Zhang, Q. Liu, and Z. Yu Simulation investigation of double-gate CNR-MOSFETs with a fully self-consistent NEGF and TB method IEDM Technol. Dig. 2007 761 764
20. R. Venugopal, Z. Ren, S. Datta, M.S. Lundstrom, and D. Jovanovic Simulating quantum transport in nanoscale transistors: real versus mode-space approaches J. Appl. Phys. 92 2002 3730 3739
21. J. Guo, A. Javey, H. Dai, and M. Lundstrom Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistor IEDM Technol. Dig. 2004 703 706 (Pubitemid 40928390)