Diffusion coefficient, correlation function, and power spectral density of velocity fluctuations in monolayer graphene

Journal of Applied Physics

Volumn 114, Issue 14, 2013, Pages

  Rengel, R ^a   Martin M J ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC-PHONON SCATTERING; BOLTZMANN TRANSPORT EQUATION; DRIFT-DIFFUSION MODEL; ELECTRONIC TRANSPORT PROPERTIES; ENSEMBLE MONTE CARLO; SECOND CENTRAL MOMENTS; TRANSVERSAL DIRECTIONS; VELOCITY FLUCTUATIONS;

ELECTRIC FIELDS; FOURIER ANALYSIS; GRAPHENE; MONOLAYERS; MONTE CARLO METHODS; POWER SPECTRAL DENSITY; TRANSPORT PROPERTIES;

DIFFUSION;

EID: 84886017837     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824182     Document Type: Article

References (64)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896 (Pubitemid 39440910)
2. K. S. Novoselov, V. I. Fal'ko, L. Colombo, P. R. Gellert, M. G. Schwab, and K. Kim, Nature 490, 192 (2012). 10.1038/nature11458
3. S. Das Sarma, S. Adam, E. H. Hwang, and E. Rossi, Rev. Mod. Phys. 83, 407 (2011). 10.1103/RevModPhys.83.407
4. F. Schwierz, Nat. Nanotechnol. 5, 487 (2010). 10.1038/nnano.2010.89
5. L. Liao, Y.-C. Lin, M. Bao, R. Cheng, J. Bai, Y. Liu, Y. Qu, K. L. Wang, Y. Huang, and X. Duan, Nature 467, 305 (2010). 10.1038/nature09405
6. L. Liao, J. Bai, R. Cheng, Y.-C. Lin, S. Jiang, Y. Qu, Y. Huang, and X. Duan, Nano Lett. 10, 3952 (2010). 10.1021/nl101724k
7. J. Zheng, L. Wang, R. Quhe, Q. Liu, H. Li, D. Yu, W.-N. Mei, J. Shi, Z. Gao, and J. Lu, Sci. Rep. 3, 1314 (2013). 10.1038/srep01314
8. S. Das and J. Appenzeller, in 2011 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (2011), pp. 1-4.
9. W. Knap, S. Rumyantsev, M. S. Vitiello, D. Coquillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A. Tredicucci, and T. Nagatsuma, Nanotechnology 24, 214002 (2013). 10.1088/0957-4484/24/21/214002
10. T. Otsuji, S. A. B. Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii, J. Phys. D: Appl. Phys. 45, 303001 (2012). 10.1088/0022-3727/45/30/303001
11. T. Otsuji, T. Watanabe, S. B. Tombet, A. Satou, W. Knap, V. Popov, M. Ryzhii, and V. Ryzhii, IEEE Trans. Terahertz Sci. Technol. 3, 63 (2013). 10.1109/TTHZ.2012.2235911
12. A. A. Dubinov, V. Y. Aleshkin, V. Mitin, T. Otsuji, and V. Ryzhii, J. Phys.: Condens. Matter 23, 145302 (2011). 10.1088/0953-8984/23/14/145302
13. G. Iannaccone, A. Betti, and G. Fiori, in 2011 21st International Conference on Noise and Fluctuations (ICNF) (2011), pp. 360-363.
14. S. Rumyantsev, G. Liu, W. Stillman, M. Shur, and A. A. Balandin, J. Phys.: Condens. Matter 22, 395302 (2010). 10.1088/0953-8984/22/39/395302
15. J. S. Moon, D. Curtis, D. Zehnder, S. Kim, D. K. Gaskill, G. Jernigan, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell, K.-M. Lee, and P. Asbeck, IEEE Electron Device Lett. 32, 270 (2011). 10.1109/LED.2010.2100074
16. A. N. Pal, S. Ghatak, V. Kochat, E. S. Sneha, A. Sampathkumar, S. Raghavan, and A. Ghosh, ACS Nano 5, 2075 (2011). 10.1021/nn103273n
17. Y. Zhang, E. E. Mendez, and X. Du, ACS Nano 5, 8124 (2011). 10.1021/nn202749z
18. L. Ardaravicius, J. Liberis, E. Sermuksnis, A. Matulionis, J. Hwang, J. Y. Kwak, D. Campbell, H. A. Alsalman, L. F. Eastman, and M. G. Spencer, Phys. Status Solidi (RRL) 7, 348 (2013). 10.1002/pssr.201307074
19. M. Belonenko, N. Lebedev, and S. Sudorgin, Tech. Phys. 57, 1025 (2012). 10.1134/S1063784212070043
20. B. A. Ruzicka, S. Wang, L. K. Werake, B. Weintrub, K. P. Loh, and H. Zhao, Phys. Rev. B 82, 195414 (2010). 10.1103/PhysRevB.82.195414
21. B. A. Ruzicka, S. Wang, J. Liu, K.-P. Loh, J. Z. Wu, and H. Zhao, Opt. Mater. Express 2, 708 (2012). 10.1364/OME.2.000708
22. K. Ziegler, Phys. Rev. B 79, 195424 (2009). 10.1103/PhysRevB.79.195424
23. T. Ando, NPG Asia Mater. 1, 17 (2009). 10.1038/asiamat.2009.1
24. M. Ancona, IEEE Trans. Electron Devices 57, 681 (2010). 10.1109/TED.2009.2038644
25. T. Stauber, N. M. R. Peres, and F. Guinea, Phys. Rev. B 76, 205423 (2007). 10.1103/PhysRevB.76.205423
26. S. Adam, P. W. Brouwer, and S. Das Sarma, Phys. Rev. B 79, 201404 (2009). 10.1103/PhysRevB.79.201404
27. D. Ferry, J. Comput. Electron. 12, 76 (2013). 10.1007/s10825-012-0431-x
28. A. Akturk and N. Goldsman, J. Appl. Phys. 103, 053702 (2008). 10.1063/1.2890147 (Pubitemid 351394086)
29. J. Chauhan and J. Guo, Appl. Phys. Lett. 95, 023120 (2009). 10.1063/1.3182740
30. R. S. Shishir and D. K. Ferry, J. Phys.: Condens. Matter 21, 344201 (2009). 10.1088/0953-8984/21/34/344201
31. M. Bresciani, P. Palestri, D. Esseni, and L. Selmi, Solid-State Electron. 54, 1015 (2010). 10.1016/j.sse.2010.04.038
32. X. Li, E. A. Barry, J. M. Zavada, M. B. Nardelli, and K. W. Kim, Appl. Phys. Lett. 97, 082101 (2010). 10.1063/1.3483612
33. T. Fang, A. Konar, H. Xing, and D. Jena, Phys. Rev. B 84, 125450 (2011). 10.1103/PhysRevB.84.125450
34. B. Ghosh and S. Misra, J. Appl. Phys. 110, 043711 (2011). 10.1063/1.3622661
35. N. Harada, Y. Awano, S. Sato, and N. Yokoyama, J. Appl. Phys. 109, 104509 (2011). 10.1063/1.3581118
36. E. Sano, Appl. Phys. Express 4, 085101 (2011). 10.1143/APEX.4.085101
37. J. K. David, L. Register, and S. Banerjee, IEEE Trans. Electron Devices 59, 976 (2012). 10.1109/TED.2012.2184116
38. R. Rengel, C. Couso, and M. Martin, in 2013 Spanish Conference on Electron Devices (CDE) (2013), pp. 175-178.
39. R. Fauquembergue, J. Zimmermann, A. Kaszynski, and E. Constant, J. Appl. Phys. 51, 1065 (1980). 10.1063/1.327713 (Pubitemid 11423943)
40. R. Brunetti, C. Jacoboni, F. Nava, L. Reggiani, G. Bosman, and R. J. J. Zijlstra, J. Appl. Phys. 52, 6713 (1981). 10.1063/1.328622 (Pubitemid 12448092)
41. T. G. Sánchez, J. E. V. Pérez, P. M. G. Conde, and D. P. Collantes, J. Appl. Phys. 72, 2322 (1992). 10.1063/1.351574
42. P. Borowik and J. L. Thobel, Semicond. Sci. Technol. 14, 450 (1999). 10.1088/0268-1242/14/5/014
43. H.-S. P. Wong and D. Akinwande, Carbon Nanotube and Graphene Device Physics, 1st ed. (Cambridge University Press, 2011).
44. K. M. Borysenko, J. T. Mullen, E. A. Barry, S. Paul, Y. G. Semenov, J. M. Zavada, M. B. Nardelli, and K. W. Kim, Phys. Rev. B 81, 121412 (2010). 10.1103/PhysRevB.81.121412
45. E. H. Hwang and S. Das Sarma, Phys. Rev. B 77, 115449 (2008). 10.1103/PhysRevB.77.115449
46. X. Li, E. A. Barry, J. M. Zavada, M. B. Nardelli, and K. W. Kim, Appl. Phys. Lett. 97, 232105 (2010). 10.1063/1.3525606
47. P. Lugli and D. Ferry, IEEE Trans. Electron Devices 32, 2431 (1985). 10.1109/T-ED.1985.22291
48. M. Martin, C. Couso, and R. Rengel, in 22nd International Conference on Noise and Fluctuations (ICNF, Montpellier, France, 2013), 2013.
49. V. E. Dorgan, A. Behnam, H. J. Conley, K. I. Bolotin, and E. Pop, "High-field electrical and thermal transport in suspended graphene," Nano Lett. (published online).
50. S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, and A. K. Geim, Phys. Rev. Lett. 100, 016602 (2008). 10.1103/PhysRevLett.100.016602 (Pubitemid 351388329)
51. K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, and P. Kim, Phys. Rev. Lett. 101, 096802 (2008). 10.1103/PhysRevLett.101.096802
52. K. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. Stormer, Solid State Commun. 146, 351 (2008). 10.1016/j.ssc.2008.02.024
53. P. Neugebauer, M. Orlita, C. Faugeras, A.-L. Barra, and M. Potemski, Phys. Rev. Lett. 103, 136403 (2009). 10.1103/PhysRevLett.103.136403
54. D. C. Elias, R. V. Gorbachev, A. S. Mayorov, S. V. Morozov, A. A. Zhukov, P. Blake, L. A. Ponomarenko, I. V. Grigorieva, K. S. Novoselov, F. Guinea, and A. K. Geim, Nat. Phys. 7, 701 (2011). 10.1038/nphys2049
55. E. V. Castro, H. Ochoa, M. I. Katsnelson, R. V. Gorbachev, D. C. Elias, K. S. Novoselov, A. K. Geim, and F. Guinea, Phys. Rev. Lett. 105, 266601 (2010). 10.1103/PhysRevLett.105.266601
56. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Saunders College, 1976).
57. B. R. Nag, Electron Transport in Compound Semiconductors (Springer, London, 1980).
58. G. I. Zebrev, " Graphene field effect transistors: Diffusion-drift theory.," in Physics and Applications of Graphene-Theory, edited by, S. Mikhailov, (InTech, 2011).
59. J. L. Thobel, A. Sleiman, and R. Fauquembergue, J. Appl. Phys. 82, 1220 (1997). 10.1063/1.365892
60. P. Borowik and J. L. Thobel, J. Appl. Phys. 87, 329 (2000). 10.1063/1.371865
61. C. Jacoboni and P. Lugli, The Monte-Carlo Method for Semiconductor Device Simulation (Springer, 1989).
62. W.-K. Tse, E. H. Hwang, and S. D. Sarma, Appl. Phys. Lett. 93, 023128 (2008). 10.1063/1.2956669
63. T. Winzer and E. Malic, J. Phys.: Condens. Matter 25, 054201 (2013). 10.1088/0953-8984/25/5/054201
64. S. Winnerl, F. Göttfert, M. Mittendorff, H. Schneider, M. Helm, T. Winzer, E. Malic, A. Knorr, M. Orlita, M. Potemski, M. Sprinkle, C. Berger, and W. A. de Heer, J. Phys.: Condens. Matter 25, 054202 (2013). 10.1088/0953-8984/ 25/5/054202