-
1
-
-
79958802246
-
-
in, Tsukuba, 2008 (The Japan Society of Applied Physics, Tokyo)
-
J. A. del Alamo, D.-H. Kim, and N. Waldron, in Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, Tsukuba, 2008 (The Japan Society of Applied Physics, Tokyo, 2008), p. 28.
-
(2008)
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials
, pp. 28
-
-
Del Alamo, J.A.1
Kim, D.-H.2
Waldron, N.3
-
2
-
-
34047272089
-
Device structures and carrier transport properties of advanced CMOS using high mobility channels
-
DOI 10.1016/j.sse.2007.02.017, PII S0038110107000512
-
S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane, and S. Sugahara, Solid-State Electron. 51, 526 (2007). 10.1016/j.sse.2007.02.017 (Pubitemid 46550573)
-
(2007)
Solid-State Electronics
, vol.51
, Issue.4 SPEC. ISS.
, pp. 526-536
-
-
Takagi, S.1
Tezuka, T.2
Irisawa, T.3
Nakaharai, S.4
Numata, T.5
Usuda, K.6
Sugiyama, N.7
Shichijo, M.8
Nakane, R.9
Sugahara, S.10
-
3
-
-
79958834768
-
-
in, Tsukuba, 2008 (The Japan Society of Applied Physics, Tokyo)
-
H. -S. P.P. Wong, in Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, Tsukuba, 2008 (The Japan Society of Applied Physics, Tokyo, 2008), p. 38.
-
(2008)
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials
, pp. 38
-
-
Wong, H.-S.P.P.1
-
4
-
-
79958852773
-
-
http://www.itrs.net/
-
-
-
-
5
-
-
7444220645
-
Electric field in atomically thin carbon films
-
DOI 10.1126/science.1102896
-
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896 (Pubitemid 39440910)
-
(2004)
Science
, vol.306
, Issue.5696
, pp. 666-669
-
-
Novoselov, K.S.1
Geim, A.K.2
Morozov, S.V.3
Jiang, D.4
Zhang, Y.5
Dubonos, S.V.6
Grigorieva, I.V.7
Firsov, A.A.8
-
6
-
-
43049170468
-
-
10.1016/j.ssc.2008.02.024
-
K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. L. Stormer, Solid State Commun. 146, 351 (2008). 10.1016/j.ssc.2008.02.024
-
(2008)
Solid State Commun.
, vol.146
, pp. 351
-
-
Bolotin, K.I.1
Sikes, K.J.2
Jiang, Z.3
Klima, M.4
Fudenberg, G.5
Hone, J.6
Kim, P.7
Stormer, H.L.8
-
8
-
-
34548658933
-
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation
-
DOI 10.1063/1.2775917
-
G. Liang, N. Neophytou, M. S. Lundstrom, and D. E. Nikonov, J. Appl. Phys. 102, 054307 (2007). 10.1063/1.2775917 (Pubitemid 47409847)
-
(2007)
Journal of Applied Physics
, vol.102
, Issue.5
, pp. 054307
-
-
Liang, G.1
Neophytou, N.2
Lundstrom, M.S.3
Nikonov, D.E.4
-
9
-
-
34547380841
-
Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping
-
DOI 10.1021/nl070133j
-
Q. Yan, B. Huang, J. Yu, F. Zheng, J. Zang, J. Wu, B.-L. Gu, F. Liu, and W. Duan, Nano Lett. 7, 1469 (2007). 10.1021/nl070133j (Pubitemid 47140408)
-
(2007)
Nano Letters
, vol.7
, Issue.6
, pp. 1469-1473
-
-
Yan, Q.1
Huang, B.2
Yu, J.3
Zheng, F.4
Zang, J.5
Wu, J.6
Gu, B.-L.7
Liu, F.8
Duan, W.9
-
10
-
-
34547828973
-
Simulation of graphene nanoribbon field-effect transistors
-
DOI 10.1109/LED.2007.901680
-
G. Fiori and G. Iannaccone, IEEE Electron Device Lett. 28, 760 (2007). 10.1109/LED.2007.901680 (Pubitemid 47243564)
-
(2007)
IEEE Electron Device Letters
, vol.28
, Issue.8
, pp. 760-762
-
-
Fiori, G.1
Iannaccone, G.2
-
11
-
-
38849172702
-
Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study
-
DOI 10.1109/TED.2007.902692
-
Y. Ouyang, Y. Yoon, and J. Guo, IEEE Trans. Electron Devices 54, 2223 (2007). 10.1109/TED.2007.902692 (Pubitemid 351485740)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.9
, pp. 2223-2231
-
-
Ouyang, Y.1
Yoon, Y.2
Guo, J.3
-
12
-
-
50549096057
-
-
10.1109/TED.2008.928021
-
Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo, IEEE Trans. Electron Devices 55, 2314 (2008). 10.1109/TED.2008.928021
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, pp. 2314
-
-
Yoon, Y.1
Fiori, G.2
Hong, S.3
Iannaccone, G.4
Guo, J.5
-
13
-
-
45749113730
-
-
10.1063/1.2949749
-
Y. Ouyang, X. Wang, H. Dai, and J. Guo, Appl. Phys. Lett. 92, 243124 (2008). 10.1063/1.2949749
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 243124
-
-
Ouyang, Y.1
Wang, X.2
Dai, H.3
Guo, J.4
-
14
-
-
41549136961
-
-
10.1103/PhysRevB.77.115449
-
E. H. Hwang and S. D. Sarma, Phys. Rev. B 77, 115449 (2008). 10.1103/PhysRevB.77.115449
-
(2008)
Phys. Rev. B
, vol.77
, pp. 115449
-
-
Hwang, E.H.1
Sarma, S.D.2
-
15
-
-
50249145723
-
-
10.1103/PhysRevLett.101.096802
-
K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, and P. Kim, Phys. Rev. Lett. 101, 096802 (2008). 10.1103/PhysRevLett.101.096802
-
(2008)
Phys. Rev. Lett.
, vol.101
, pp. 096802
-
-
Bolotin, K.I.1
Sikes, K.J.2
Hone, J.3
Stormer, H.L.4
Kim, P.5
-
16
-
-
41849125958
-
2
-
DOI 10.1038/nnano.2008.58, PII NNANO200858
-
J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. 3, 206 (2008). 10.1038/nnano.2008.58 (Pubitemid 351499398)
-
(2008)
Nature Nanotechnology
, vol.3
, Issue.4
, pp. 206-209
-
-
Chen, J.-H.1
Jang, C.2
Xiao, S.3
Ishigami, M.4
Fuhrer, M.S.5
-
17
-
-
40849088148
-
Electron transport and full-band electron-phonon interactions in graphene
-
DOI 10.1063/1.2890147
-
A. Akturk and N. Goldsman, J. Appl. Phys. 103, 053702 (2008). 10.1063/1.2890147 (Pubitemid 351394086)
-
(2008)
Journal of Applied Physics
, vol.103
, Issue.5
, pp. 053702
-
-
Akturk, A.1
Goldsman, N.2
-
19
-
-
33847306075
-
-
10.1143/JPSJ.75.074716
-
T. Ando, J. Phys. Soc. Jpn. 75, 074716 (2006). 10.1143/JPSJ.75.074716
-
(2006)
J. Phys. Soc. Jpn.
, vol.75
, pp. 074716
-
-
Ando, T.1
-
20
-
-
34247889934
-
Carrier transport in two-dimensional graphene layers
-
DOI 10.1103/PhysRevLett.98.186806
-
E. H. Hwang, S. Adam, and S. D. Sarma, Phys. Rev. Lett. 98, 186806 (2007). 10.1103/PhysRevLett.98.186806 (Pubitemid 46701738)
-
(2007)
Physical Review Letters
, vol.98
, Issue.18
, pp. 186806
-
-
Hwang, E.H.1
Adam, S.2
Sarma, S.D.3
-
22
-
-
43149118786
-
-
10.1038/nphys935
-
J. H. Chen, C. Jang, M. S. Fuhrer, E. D. Williams, and M. Ishigami, Nat. Phys. 4, 377 (2008). 10.1038/nphys935
-
(2008)
Nat. Phys.
, vol.4
, pp. 377
-
-
Chen, J.H.1
Jang, C.2
Fuhrer, M.S.3
Williams, E.D.4
Ishigami, M.5
-
23
-
-
43949143884
-
-
10.1103/PhysRevB.77.195415
-
S. Fratini and F. Guinea, Phys. Rev. B 77, 195415 (2008). 10.1103/PhysRevB.77.195415
-
(2008)
Phys. Rev. B
, vol.77
, pp. 195415
-
-
Fratini, S.1
Guinea, F.2
-
24
-
-
77957707136
-
-
10.1103/PhysRevB.82.115452
-
A. Konar, T. Fang, and D. Jena, Phys. Rev. B 82, 115452 (2010). 10.1103/PhysRevB.82.115452
-
(2010)
Phys. Rev. B
, vol.82
, pp. 115452
-
-
Konar, A.1
Fang, T.2
Jena, D.3
-
27
-
-
67649304648
-
-
10.1109/LED.2009.2020699
-
J. S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P. M. Campbell, G. Jernigan, J. L. Tedesco, B. VanMil, R. Myers-Ward, C. Eddy, Jr., and D. K. Gaskill, IEEE Electron Device Lett. 30, 650 (2009). 10.1109/LED.2009.2020699
-
(2009)
IEEE Electron Device Lett.
, vol.30
, pp. 650
-
-
Moon, J.S.1
Curtis, D.2
Hu, M.3
Wong, D.4
McGuire, C.5
Campbell, P.M.6
Jernigan, G.7
Tedesco, J.L.8
Vanmil, B.9
Myers-Ward, R.10
Eddy, Jr.C.11
Gaskill, D.K.12
-
28
-
-
72949097851
-
-
10.1109/LED.2009.2034876
-
Y.-M. Lin, H.-Y. Chiu, K. A. Jenkins, D. B. Farmer, P. Avouris, and A. Valdes-Garcia, IEEE Electron Device Lett. 31, 68 (2010). 10.1109/LED.2009. 2034876
-
(2010)
IEEE Electron Device Lett.
, vol.31
, pp. 68
-
-
Lin, Y.-M.1
Chiu, H.-Y.2
Jenkins, K.A.3
Farmer, D.B.4
Avouris, P.5
Valdes-Garcia, A.6
-
29
-
-
57349090160
-
-
10.1038/nnano.2008.268
-
I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, Nat. Nanotechnol. 3, 654 (2008). 10.1038/nnano.2008.268
-
(2008)
Nat. Nanotechnol.
, vol.3
, pp. 654
-
-
Meric, I.1
Han, M.Y.2
Young, A.F.3
Ozyilmaz, B.4
Kim, P.5
Shepard, K.L.6
-
30
-
-
40049093097
-
Chemically derived, ultrasmooth graphene nanoribbon semiconductors
-
DOI 10.1126/science.1150878
-
X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science 319, 1229 (2008). 10.1126/science.1150878 (Pubitemid 351323015)
-
(2008)
Science
, vol.319
, Issue.5867
, pp. 1229-1232
-
-
Li, X.1
Wang, X.2
Zhang, L.3
Lee, S.4
Dai, H.5
-
31
-
-
76249092549
-
-
10.1109/TED.2009.2037365
-
H. Tsuchiya, H. Ando, S. Sawamoto, T. Maegawa, T. Hara, H. Yao, and M. Ogawa, IEEE Trans. Electron Devices 57, 406 (2010). 10.1109/TED.2009.2037365
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, pp. 406
-
-
Tsuchiya, H.1
Ando, H.2
Sawamoto, S.3
Maegawa, T.4
Hara, T.5
Yao, H.6
Ogawa, M.7
-
32
-
-
0020474491
-
-
10.1049/el:19820089
-
Y. Awano, K. Tomizawa, N. Hashizume, and M. Kawashima, Electron. Lett. 18, 133 (1982). 10.1049/el:19820089
-
(1982)
Electron. Lett.
, vol.18
, pp. 133
-
-
Awano, Y.1
Tomizawa, K.2
Hashizume, N.3
Kawashima, M.4
-
33
-
-
1642585850
-
-
10.1103/PhysRevLett.92.075501
-
J. Maultzsch, S. Reich, C. Thomsen, H. Requardt, and P. Ordejon, Phys. Rev. Lett. 92, 075501 (2004). 10.1103/PhysRevLett.92.075501
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 075501
-
-
Maultzsch, J.1
Reich, S.2
Thomsen, C.3
Requardt, H.4
Ordejon, P.5
-
34
-
-
79958785779
-
-
We also performed simulations by using the energy dependent phonon emission rate to check the validity of the constant rate model. The energy dependent rate was calculated taking account of the two dimensionality and the linear energy-band dispersion of monolayer graphene and was also used in Ref.. Two electron velocity profiles, resulting from the energy dependent model and the constant model, are compared and the averaged difference is 4.0. When the drain voltage and the electron energy are low, we may say that the constant model is a good approximation if we choose a proper value.
-
We also performed simulations by using the energy dependent phonon emission rate to check the validity of the constant rate model. The energy dependent rate was calculated taking account of the two dimensionality and the linear energy-band dispersion of monolayer graphene and was also used in Ref.. Two electron velocity profiles, resulting from the energy dependent model and the constant model, are compared and the averaged difference is 4.0. When the drain voltage and the electron energy are low, we may say that the constant model is a good approximation if we choose a proper value.
-
-
-
-
35
-
-
33744469329
-
Electronic confinement and coherence in patterned epitaxial graphene
-
DOI 10.1126/science.1125925
-
C. Berger, Z. song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, Science 312, 1191 (2006). 10.1126/science.1125925 (Pubitemid 43801140)
-
(2006)
Science
, vol.312
, Issue.5777
, pp. 1191-1196
-
-
Berger, C.1
Song, Z.2
Li, X.3
Wu, X.4
Brown, N.5
Naud, C.6
Mayou, D.7
Li, T.8
Hass, J.9
Marchenkov, A.N.10
Conrad, E.H.11
First, P.N.12
De Heer, W.A.13
-
36
-
-
36449008742
-
-
10.1063/1.357263
-
K. Natori, J. Appl. Phys. 76, 4879 (1994). 10.1063/1.357263
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 4879
-
-
Natori, K.1
-
39
-
-
79958853107
-
-
Y. Q. Wu, Y.-M. Lin, K. A. Jenkins, J. A. Ott, C. Dimitrakopoulos, D. B. Farmer, F. Xia, A. Grill, D. A. Antoniadis, and Ph. Avouris, IEDM Tech. Dig., 2010, 226.
-
IEDM Tech. Dig.
, vol.2010
, pp. 226
-
-
Wu, Y.Q.1
Lin, Y.-M.2
Jenkins, K.A.3
Ott, J.A.4
Dimitrakopoulos, C.5
Farmer, D.B.6
Xia, F.7
Grill, A.8
Antoniadis, D.A.9
Avouris, Ph.10
|