High-k ZrO2 dielectric thin films on GaAs semiconductor with reduced regrowth of native oxides by atomic layer deposition

Chemical Physics Letters

Volumn 583, Issue , 2013, Pages 74-79

  Konda, R B ^a   White, C ^a   Smak, J ^a   Mundle, R ^a   Bahoura, M ^a   Pradhan, A K ^a  

^a NORFOLK STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEPOSITION; DIELECTRIC DEVICES; GALLIUM ARSENIDE; GATE DIELECTRICS; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; LEAKAGE CURRENTS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM ALLOYS;

CAPACITANCE VOLTAGE CHARACTERISTIC; DIELECTRIC THIN FILMS; GAAS SEMICONDUCTORS; HIGH- K GATE DIELECTRICS; INTERFACIAL TRAP DENSITIES; METAL OXIDE SEMICONDUCTOR; THERMAL CONVERSION; TRIMETHYLALUMINUM;

ATOMIC LAYER DEPOSITION;

EID: 84885617888     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2013.08.012     Document Type: Article

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