The role of proximity caps during the annealing of UV-ozone oxidized GaAs

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Ghosh, S C ^a   Biesinger, M C ^b   Lapierre, R R ^a   Kruse, P ^a,c  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DESORPTION; OXIDATION; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPOUND SEMICONDUCTORS; SACRIFICIAL LAYERS; SURFACE DETERIORATION;

GALLIUM COMPOUNDS;

EID: 34250685412     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2740359     Document Type: Article

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