Excellent resistive switching in nitrogen-doped Ge2Sb 2Te5 devices for field-programmable gate array configurations

Applied Physics Letters

Volumn 99, Issue 19, 2011, Pages

  Kim, Seonghyun ^a   Park, Jubong ^a   Jung, Seungjae ^a   Lee, Wootae ^a   Woo, Jiyong ^a   Cho, Chunhum ^a   Siddik, Manzar ^a   Shin, Jungho ^a   Park, Sangsu ^a   Hun Lee, Byoung ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL ISSUES; FPGA TECHNOLOGY; GATE ARRAYS; HIGH RESISTANCE; NITROGEN-DOPED; NITROGEN-DOPING; OPERATING VOLTAGE; PROGRAMMABLE METALLIZATION CELLS; RESISTANCE RATIO; RESISTIVE SWITCHING; RETENTION PROPERTIES; SWITCHING VOLTAGES;

GERMANIUM; LOGIC GATES; NITROGEN; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; STATIC RANDOM ACCESS STORAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

FIELD PROGRAMMABLE GATE ARRAYS (FPGA);

EID: 81155125105     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659692     Document Type: Article

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