Controlling the synaptic plasticity of a Cu 2S gap-type atomic switch

Advanced Functional Materials

Volumn 22, Issue 17, 2012, Pages 3606-3613

  Nayak, Alpana ^a   Ohno, Takeo ^a   Tsuruoka, Tohru ^a   Terabe, Kazuya ^a   Hasegawa, Tsuyoshi ^a   Gimzewski, James K ^b   Aono, Masakazu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

atomic switches; nanoelectronics; neuromorphic systems; resistive switching; synapse behavior

Indexed keywords

ATOMIC SWITCHES; BIOLOGICAL SYNAPSE; ELEVATED TEMPERATURE; HUMAN BRAIN; HUMAN MEMORY; IN-VACUUM; INPUT PULSE; INPUT VOLTAGES; LONG TERM MEMORY; NEUROMORPHIC SYSTEMS; RESISTIVE SWITCHING; SYNAPSE BEHAVIOR; SYNAPTIC CONNECTIONS; SYNAPTIC PLASTICITY; SYNAPTIC TRANSMISSION; TIME-DEPENDENT; UNDER VOLTAGE;

BRAIN; ELECTRIC POTENTIAL; NANOELECTRONICS; NEURAL NETWORKS; SCANNING TUNNELING MICROSCOPY;

ATOMS;

EID: 84865788747     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201200640     Document Type: Article

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