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Volumn 378, Issue , 2013, Pages 201-204

Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

Author keywords

Impurity doping; MBE; Semiconducting silicides; Solar cell

Indexed keywords

EPITAXIAL GROWTH; HOLE CONCENTRATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR DOPING; SILICIDES; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILMS;

EID: 84885483717     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.12.153     Document Type: Article
Times cited : (18)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.