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Volumn 378, Issue , 2013, Pages 201-204
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Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
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Author keywords
Impurity doping; MBE; Semiconducting silicides; Solar cell
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Indexed keywords
EPITAXIAL GROWTH;
HOLE CONCENTRATION;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
SEMICONDUCTOR DOPING;
SILICIDES;
SILICON SOLAR CELLS;
SOLAR CELLS;
THIN FILMS;
ACCEPTOR LEVELS;
BORON-DOPED P;
IMPURITY DOPING;
KNUDSEN CELL;
P-TYPE;
SI (1 1 1);
SI(111) SUBSTRATE;
THIN FILM SOLAR CELLS;
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EID: 84885483717
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.12.153 Document Type: Article |
Times cited : (18)
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References (20)
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