Consideration on the possibility of band gap widening of BaSi2 by incorporation of alkali metal elements (Na, K, and Cs) using electronic energy and structure calculation

Intermetallics

Volumn 18, Issue 3, 2010, Pages 348-352

  Imai, Yoji ^a   Watanabe, Akio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A. Silicides, various; E. Ab initio calculation

Indexed keywords

ALKALI METAL ELEMENTS; BAND GAP WIDENING; BAND GAPS; DOPING CONCENTRATION; E. AB-INITIO CALCULATIONS; ELECTRONIC ENERGIES; FIRST-PRINCIPLES; INTRINSIC SEMICONDUCTORS; N-TYPE SEMICONDUCTORS; P TYPE SEMICONDUCTOR; PSEUDOPOTENTIAL METHOD; SILICIDES , VARIOUS; STRUCTURE CALCULATION;

BARIUM; CESIUM; CRYSTALLIZATION; ENERGY GAP; SEMICONDUCTOR DOPING; SILICIDES; SILICON; SODIUM; SOLID SOLUTIONS; SOLIDIFICATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74649083670     PISSN: 09669795     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.intermet.2009.08.012     Document Type: Article

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