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Volumn 15, Issue 10, 2007, Pages 1291-1296
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Energetic and the electronic structural consideration of the 13th Group element (Ga and In) impurity doping to control the conductivity of BaSi2
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Author keywords
A. Silicides, various; B. Electrical resistance and other electrical properties; B. Electronic structure of metals and alloys; E. Electronic structure, calculation; E. Simulations, atomistic
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Indexed keywords
ENERGETIC POINTS;
FIRST PRINCIPLE PSEUDOPOTENTIAL METHODS;
VALENCE ELECTRONS;
COMPUTER SIMULATION;
DOPING (ADDITIVES);
ELECTRIC RESISTANCE;
ELECTRONIC STRUCTURE;
FERMI LEVEL;
GALLIUM;
HEAT CONDUCTION;
INDIUM;
VALENCE BANDS;
BARIUM COMPOUNDS;
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EID: 34447258653
PISSN: 09669795
EISSN: None
Source Type: Journal
DOI: 10.1016/j.intermet.2007.03.007 Document Type: Article |
Times cited : (32)
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References (14)
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