Growth of Al-doped p-type BaSi2 films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties

Physics Procedia

Volumn 11, Issue , 2011, Pages 27-30

  Takeishi, M ^a   Matsumoto, Y ^a   Sasaki, R ^a   Saito, T ^a   Suemasu, T ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Doping; Hall measurement; Molecular beam epitaxy

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL GROWTH; HOLE CONCENTRATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICIDES;

AL DOPED; AS-GROWN; HALL MEASUREMENTS; HETERO INTERFACES; HIGH-TEMPERATURE ANNEALING; P TYPE CONDUCTIVITY; P-TYPE;

ALUMINUM;

EID: 79959399841     PISSN: 18753884     EISSN: 18753892     Source Type: Conference Proceeding    
DOI: 10.1016/j.phpro.2011.01.030     Document Type: Conference Paper

References (8)

1. K. Morita, Y. Inomata, and T. Suemasu: Thin Solid Films 508 (2006) 363.
2. Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, and T. Suemasu: Appl. Phys. Express 2 (2009) 021101.
3. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu: Appl. Phys. Express 2 (2009) 051601.
4. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu: J. Cryst. Growth 311 (2009) 3581.
5. M. Kobayashi, Y. Matsumoto, Y. Ichikawa, D. Tsukada, and T. Suemasu: Appl. Phys. Express 1 (2008) 051403.
6. Y. Inomata, T. Nakamura, T. Suemasu, F. Hasegawa, Jpn. J. Appl. Phys. 43 (2004) 4155.
7. Y. Inomata, T. Nakamura, T. Suemasu, F. Hasegawa, Jpn. J. Appl. Phys. 43 (2004) L478.
8. Y. Inomata, T. Suemasu, T. Izawa, F. Hasegawa, Jpn. J. Appl. Phys. 43 (2004) L771.