|
|
Volumn 11, Issue , 2011, Pages 11-14
|
|
Al- and Cu-doped BaSi2 films on Si(111) substrate by molecular beam epitaxy and evaluation of depth profiles of Al and Cu atoms
a
|
|
Author keywords
Carrier concentrations; Cost effective; Depth profile; Doping; Efficient solar cells; MBE; RDE; Segregation; SIMS; Van der Pauw method; XRD
|
|
Indexed keywords
ALUMINUM;
CARRIER CONCENTRATION;
COST EFFECTIVENESS;
DEPTH PROFILING;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
INTERFACES (MATERIALS);
MASS SPECTROMETRY;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
OPTOELECTRONIC DEVICES;
SECONDARY ION MASS SPECTROMETRY;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTOR DOPING;
SILICIDES;
SURFACE SEGREGATION;
X RAY DIFFRACTION;
COST EFFECTIVE;
CU ATOMS;
HALL MEASUREMENTS;
INTERFACE REGIONS;
REACTIVE DEPOSITION EPITAXY;
SECONDARY ION MASS SPECTROSCOPIES (SIMS);
SI(111) SUBSTRATE;
VAN DER PAUW METHOD;
COPPER;
|
|
EID: 79957599452
PISSN: 18753884
EISSN: 18753892
Source Type: Conference Proceeding
DOI: 10.1016/j.phpro.2011.01.026 Document Type: Conference Paper |
|
Times cited : (24)
|
|
References (7)
|
