Confinement and integration of magnetic impurities in silicon

Applied Physics Letters

Volumn 102, Issue 8, 2013, Pages

  Rueß, Frank J ^a   El Kazzi, Mario ^a   Czornomaz, Lukas ^a   Mensch, Philipp ^a   Hopstaken, Marinus ^b   Fuhrer, Andreas ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTE MAGNETIC SEMICONDUCTORS; FERROMAGNETIC SEMICONDUCTOR; II-VI COMPOUNDS; INTERFACE TRAP DENSITY; LOW-TEMPERATURE SILICONS; MAGNETIC IMPURITY; SILICON TECHNOLOGIES; SPINTRONIC DEVICE;

INTEGRATION; MAGNETOELECTRONICS; MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON;

SILICON COMPOUNDS;

EID: 84874908328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792350     Document Type: Article

References (25)

1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000). 10.1126/science.287.5455.1019
2. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. Von Molnár, M. L. Roukes, A.Y. Chtchelkanova, and D. M. Treger, Science 294, 1488 (2001). 10.1126/science.1065389
3. A. H. MacDonald, P. Schiffer, and N. Samarth, Nature Mater. 4, 195 (2005). 10.1038/nmat1325
4. K. Olejník, M. H. S. Owen, V. Novák, J. Mašek, A. C. Irvine, J. Wunderlich, and T. Jungwirth, Phys. Rev. B 78, 054403 (2008). 10.1103/PhysRevB.78.054403
5. Y. Park, A. Hanbicki, S. Erwin, C. Hellberg, J. Sullivan, J. Mattson, T. Ambrose, A. Wilson, G. Spanos, and B. Jonker, Science 295, 651 (2002). 10.1126/science.1066348
6. S. Yada, S. Sugahara, and M. Tanaka, Appl. Phys. Lett. 93, 193108 (2008). 10.1063/1.3023070
7. M. Jamet, A. Barski, T. Devillers, V. Poydenot, R. Dujardin, P. Bayle-Guillemaud, J. Rothman, E. Bellet-Amalric, A. Marty, J. Cibert, R. Mattana, and S. Tatarenko, Nature Mater. 5, 653 (2006). 10.1038/nmat1686
8. S. Yada, P. N. Hai, S. Sugahara, and M. Tanaka, J. Appl. Phys. 110, 073903 (2011). 10.1063/1.3638701
9. Y. Zhang, Q. Jiang, D. J. Smith, and J. J. Drucker, J. Appl. Phys. 98, 033512 (2005) 10.1063/1.1988973.
10. F. M. Zhang, X. C. Liu, J. Gao, X.S. Wu, Y. W. Du, H. Zhu, J. Q. Xiao, and P. Chen, Appl. Phys. Lett. 85, 786 (2004). 10.1063/1.1775886
11. J. H. Yao, H. H. Lin, Y. L. Soo, T. S. Wu, J. L. Tsai, M. D. Lan, and T. S. Chin, Appl. Phys. Lett. 100, 092404 (2012). 10.1063/1.3691173
12. M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. G. Ramos, G. Agnello, and V. P. LaBella, Phys. Rev. B 71, 033302 (2005). 10.1103/PhysRevB.71. 033302
13. M. Krause, A. Stollenwerk, J. Reed, V. P. LaBella, M. Hortamani, P. Kratzer, and M. Scheffler, Phys. Rev. B 75, 205326 (2007). 10.1103/PhysRevB.75. 205326
14. H. Liu and P. Reinke, Surf. Sci. 602, 986 (2008). 10.1016/j.susc.2007.12. 043
15. C. Nolph, K. R. Simov, H. Liu, and P. Reinke, J. Phys. Chem. C 114, 19727 (2010) 10.1021/jp105620d.
16. A. Fuhrer, F. J. Rueß, N. Moll, A. Curioni, and D. Widmer, Phys. Rev. Lett. 109, 146102 (2012). 10.1103/PhysRevLett.109.146102
17. H. Lippitz, J. J. Paggel, and P. Fumagalli, Surf. Sci. 575, 307 (2005). 10.1016/j.susc.2004.11.029
18. F. J. Rueß, W. Pok, T. C. G. Reusch, M. J. Butcher, K. E. J. Goh, L. Oberbeck, G. Scappucci, A. R. Hamilton, and M. Y. Simmons, Small 3, 563 (2007). 10.1002/smll.200600680
19. M. Hortamani, H. Wu, P. Kratzer, and M. Scheffler, Phys. Rev. B 74, 205305 (2006). 10.1103/PhysRevB.74.205305
20. G. Scappucci, G. Capellini, and M. Y. Simmons, Phys. Rev. B 80, 233202 (2009). 10.1103/PhysRevB.80.233202
21. M. C. Militello and S. W. Gaarenstroom, Surf. Sci. Spectra 8, 200 (2001). 10.1116/11.20020401
22. J. L. Benton and L. C. Kimerling, J. Electrochem. Soc. 129, 2098 (1982). 10.1149/1.2124387
23. R. Castagné and A. Vapaille, Surf. Sci. 28, 157 (1971). 10.1016/0039-6028(71)90092-6
24. Z. Chen, K. Yasutake, and A. Doolittle, Appl. Phys. Lett. 63, 2117 (1993). 10.1063/1.110558
25. B. Hoex, J. J. H. Gielis, M. C. M. Van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 104, 113703 (2008). 10.1063/1.3021091