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Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

(6) Zhou, Shengqiang a,b Bürger, Danilo a Skorupa, Wolfgang a Oesterlin, Peter c Helm, Manfred a Schmidt, Heidemarie a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

b PEKING UNIVERSITY (China)

c INNOVAVENT GmbH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETO TRANSPORT PROPERTIES; MN-DOPED;

FERROMAGNETISM; GERMANIUM; ION IMPLANTATION; MANGANESE; MANGANESE COMPOUNDS;

HOLE CONCENTRATION;

EID: 77953002535 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3428770 Document Type: Article

Times cited : (20)

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