Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Recht, Daniel ^a   Sullivan, Joseph T ^b   Reedy, Robert ^c   Buonassisi, Tonio ^b   Aziz, Michael J ^a  

^a HARVARD UNIVERSITY   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKED IMPURITY BAND; DOPANT CONCENTRATIONS; DOPANT PROFILE; EVAPORATION RATE; LASER MELTING; NANOSECOND PULSED LASER; NEAR-SURFACE; SILICON ION; SUB-SURFACES;

EVAPORATION; HYDROFLUORIC ACID; ION IMPLANTATION; PULSED LASERS; SULFUR;

PHASE TRANSITIONS;

EID: 84860009216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3695171     Document Type: Article

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