High concentration Mn ion implantation in Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1623-1625

  Peng, Nianhua ^a   Jeynes, Christopher ^a   Bailey, Melanie J ^a   Adikaari, Damitha ^a   Stolojan, Vlad ^a   Webb, Roger P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Dilute magnetic semiconductor; Ion implantation; Mn doping; Si

Indexed keywords

BINARY SYSTEMS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPIES; DILUTE MAGNETIC SEMICONDUCTOR; DISORDERED SURFACES; HIGH CONCENTRATIONS; HIGH DOSE; IMPLANTED SAMPLES; MN DOPING; PULSED LASER ANNEALING; RAMAN SCATTERING MEASUREMENTS; ROOM TEMPERATURE FERROMAGNETISMS; ROOM TEMPERATURES; RUTHERFORD BACKSCATTERINGS; SI; SI WAFERS; THERMAL TREATMENTS;

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ION BOMBARDMENT; ION IMPLANTATION; MAGNETIC SEMICONDUCTORS; MANGANESE; MANGANESE COMPOUNDS; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ANTIMONY; SILICON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65249086889     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.065     Document Type: Article

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