X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (≤100 nm) using a low temperature growth step

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 756-760

  Ni, W X ^a   Lyutovich, K ^b   Alami, J ^a   Tengstedt, C ^a   Bauer, M ^b   Kasper, E ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy

Indexed keywords

COOLING; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

TWO-DIMENSIONAL RECIPROCAL SPACE MAPPING;

SEMICONDUCTING FILMS;

EID: 0035398917     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00821-1     Document Type: Conference Paper

References (7)