Heterostructures of pseudomorphic Ge1-yCy and G1-x-ySixCy alloys grown on Ge (001) substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1728-1731

  Dashiell, M W ^a   Kolodzey, J ^a   Boucaud, P ^b   Yam, Vy ^b   Lourtioz, J M ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARBON; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SOLUBILITY; SUBSTITUTION REACTIONS; SUPERSATURATION; THERMODYNAMIC STABILITY;

PENDELLOSUNG FRINGES;

HETEROJUNCTIONS;

EID: 0034186950     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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