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Applied Physics Letters

Volumn 103, Issue 13, 2013, Pages

An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

(5) Hughes, M A a Homewood, K P a Curry, R J a Ohno, Y b Mizutani, T b

a UNIVERSITY OF SURREY (United Kingdom)

b NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT GEOMETRY; ELECTRICAL CHARACTERIZATION; IDEALITY FACTORS; MINORITY CARRIER INJECTION; POSITIVE BIAS; SCHOTTKY BARRIER HEIGHTS; SINGLE CARBON NANOTUBE; TI CONTACTS;

CARBON NANOTUBES; DISPLAY DEVICES;

DIODES;

EID: 84885011483 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4823602 Document Type: Article

Times cited : (25)

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