An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 9, 1998, Pages 1290-1296

  Yoshimasu, Toshihiko ^a,b,c,d,e   Akagi, Masanori ^b,f   Tanba, Noriyuki ^b,c   Hara, Shinji ^a,b,e,g,h,i  

^a IEEE   (Japan)

^b SHARP CORPORATION   (Japan)

^c KOBE UNIVERSITY   (Japan)

^d MMIC Design Group   (Japan)

^e Institute of Electronics   (Japan)

^f HIROSHIMA UNIVERSITY   (Japan)

^g WASEDA UNIVERSITY   (Japan)

^h ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

ⁱ Sharp IC Group

Author keywords

Heterojunction bipolar transistor; Linearizer; Monolithic microwave integrated circuit; Personal Handyphone System; Power amplifier

Indexed keywords

EID: 0001600474     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.711326     Document Type: Article

References (16)

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