Electronic transport in Y-junction carbon nanotubes

Physical Review Letters

Volumn 85, Issue 16, 2000, Pages 3476-3479

  Papadopoulos, C ^a   Rakitin, A ^a   Li, J ^a   Vedeneev, A S ^a,b   Xu, J M ^a,c  

^a UNIVERSITY OF TORONTO   (Canada)

^b INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

^c Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; HETEROJUNCTIONS; NANOTUBES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONIC TRANSPORT MEASUREMENT; MULTIWALLED CARBON NANOTUBE; Y-JUNCTION CARBON NANOTUBE;

ELECTRON TRANSPORT PROPERTIES;

EID: 17044453317     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.3476     Document Type: Article

References (26)

1. Future Trends in Microelectronics: The Road Ahead, edited by S. Luryi, J. M. Xu, and A. Zaslavsky (Wiley, New York, 1999).
2. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
3. C. Dekker, Phys. Today 52, No. 5, 22 (1999).
4. S. Iijima, Nature (London) 354, 56 (1991).
5. A. Thess et al., Science 273, 483 (1996).
6. W. Z. Li et al., Science 274, 1701 (1996).
7. S. J. Tans et al., Nature (London) 386, 474 (1997).
8. M. Bockrath et al., Science 275, 1922 (1997).
9. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
10. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
11. L. Chico, V. H. Crespi, L. X. Benedict, S. G. Louie, and M. L. Cohen, Phys. Rev. Lett. 76, 971 (1996).
12. M. Menon and D. Srivastava, Phys. Rev. Lett. 79, 4453 (1997).
13. Z. Yao, H. W. Ch. Postma, L. Balents, and C. Dekker, Nature (London) 402, 273 (1999).
14. J. Li, C. Papadopoulos, and J. M. Xu, Nature (London) 402, 253 (1999).
15. J. Li, C. Papadopoulos, J. M. Xu, and M. Moskovits, Appl. Phys. Lett. 75, 367 (1999).
16. L. Firlej, N. Kirova, and A. Zahab, Phys. Rev. B 59, 16 028 (1999).
17. C. H. Olk and J. P. Heremans, J. Mater. Res. 9, 259 (1994).
18. A. Rakitin, C. Papadopoulos, and J. M. Xu, Phys. Rev. B 61, 5793 (2000).
19. We performed field effect experiments on CVD-grown CNTs and found the sign of the gate voltage used to modulate the conductance implies semiconducting behavior with hole conductivity at room temperature.
20. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic Press, New York, 1972).
21. Electronic Structure of Semiconductor Heterojunctions, edited by G. Margaritondo (Kluwer, Boston, 1988).
22. 2.
23. A. Rakitin, C. Papadopoulos, D. N. Davydov, and J. M. Xu (to be published).
24. -1 which provides further support for this interpretation.
25. B. A. Aronzon, E. Z. Meilikhov, D. A. Bakaushin, A. S. Vedeneev, and V. V. Rylkov, JETP Lett. 66, 668 (1997).
26. A. S. Vedeneev et al., in Proceedings of the 1999 IEEE International Electron Devices Meeting, Washington, DC, 1999.