Graphene technology with inverted-T gate and RF passives on 200 mm platform

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Han, Shu Jen ^a   Valdes Garcia, Alberto ^a   Bol, Ageeth A ^a   Franklin, Aaron D ^a   Farmer, Damon ^a   Kratschmer, Ernst ^a   Jenkins, Keith A ^a   Haensch, Wilfried ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STRUCTURE; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; MONOLITHICALLY INTEGRATED; PASSIVE DEVICES; RF PASSIVES; VOLTAGE GAIN; WAFER-SCALE;

ELECTRON DEVICES; MESFET DEVICES; MONOLITHIC INTEGRATED CIRCUITS; SILICON WAFERS;

GRAPHENE;

EID: 84856996983     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131473     Document Type: Conference Paper

References (8)

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