Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2195-2201

  Cha, Junyoung ^a   Cha, Jiyong ^a   Lee, Seonghearn ^a  

^a Hankuk University of Foreign Studies   (South Korea)

Author keywords

CMOS; Dad; Deembedding; Interconnection; MOSFET; On wafer measurements; RF; S parameter measurement; Transistor

Indexed keywords

NONMETALS; SILICON; SILICON CARBIDE; SILICON WAFERS;

CMOS; DAD; DEEMBEDDING; INTERCONNECTION; MOSFET; ON-WAFER; ON-WAFER MEASUREMENTS; RF; S-PARAMETER MEASUREMENT; SILICON CARBIDE DEVICES; TRANSISTOR;

UNCERTAINTY ANALYSIS;

EID: 49249099123     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926752     Document Type: Article

References (9)

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