State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Lee, Jongho ^a   Parrish, Kristen N ^a   Chowdhury, Sk Fahad ^a   Ha, Tae Jun ^a   Hao, Yufeng ^b   Tao, Li ^a   Dodabalapur, Ananth ^a   Ruoff, Rodney S ^b   Akinwande, Deji ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL AND MECHANICAL PROPERTIES; ELECTRICAL PERFORMANCE; ELECTRICAL RESPONSE; FLEXIBLE SUBSTRATE; GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE TRANSISTORS; HEXAGONAL BORON NITRIDE; MECHANICAL BENDING;

BORON NITRIDE; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; MECHANICAL PROPERTIES; POLYMERIC FILMS;

GRAPHENE;

EID: 84876159379     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479044     Document Type: Conference Paper

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