Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 383, Issue , 2013, Pages 158-165

  Wu, Jun ^a   Borg, B Mattias ^a   Jacobsson, Daniel ^a   Dick, Kimberly A ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

A1. Chemical concentration; A1. Diffusion; A1. HRXRD; A3. MOVPE; B1. InGaAs nanowires

Indexed keywords

CHEMICAL COMPOSITIONS; CHEMICAL CONCENTRATIONS; DEVICE TECHNOLOGIES; ENERGY DISPERSIVE X RAY SPECTROSCOPY; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; METAL-ORGANIC VAPOR PHASE EPITAXY; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

NANOWIRES;

EID: 84884691618     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.07.038     Document Type: Article

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