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Volumn 165, Issue 3, 1996, Pages 215-221

Influence of gallium sources on carbon incorporation efficiency into InGaAs grown by metalorganic chemical vapor deposition

(2) Ito, Hiroshi a Kurishima, Kenji a

a NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; CARRIER CONCENTRATION; COMPOSITION; CRYSTAL LATTICES; GALLIUM; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUMERICAL ANALYSIS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

HOLE CONCENTRATIONS; INDIUM GALLIUM ARSENIDE; TRIETHYLGALLIUM GALLIUM; TRIMETHYLGALLIUM GALLIUM;

SEMICONDUCTOR GROWTH;

EID: 0030216626 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00174-1 Document Type: Article

Times cited : (22)

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