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Volumn 310, Issue 23, 2008, Pages 5106-5110
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VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE
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Author keywords
A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium compounds
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL GROWTH;
ELECTRIC WIRE;
GALLIUM COMPOUNDS;
HETEROJUNCTIONS;
LIQUID PHASE EPITAXY;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
NANOWIRES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
VAPORS;
A1. NANOSTRUCTURES;
A3. METALORGANIC VAPOR PHASE EPITAXY;
B2. SEMICONDUCTING GALLIUM COMPOUNDS;
COMPOSITION GRADIENTS;
GROWTH TIMES;
HETEROSTRUCTURE NANOWIRES;
INDIUM FRACTIONS;
V/III RATIOS;
VLS GROWTHS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 56249090673
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.059 Document Type: Article |
Times cited : (31)
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References (13)
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