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Volumn 310, Issue 23, 2008, Pages 5106-5110

VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM COMPOUNDS; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VAPORS;

EID: 56249090673     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.059     Document Type: Article
Times cited : (31)

References (13)
  • 10
    • 56249122671 scopus 로고    scopus 로고
    • O. Madelung, Landolt-Börnstein-Group IV Physical Chemistry, New Series, vol. 5a, Springer, Berlin, 1991.
    • O. Madelung, Landolt-Börnstein-Group IV Physical Chemistry, New Series, vol. 5a, Springer, Berlin, 1991.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.