-
1
-
-
77951026760
-
-
NALEFD 1530-6984 10.1021/nl904092h
-
S. Jo, T. Chang, I. Ebong, and B. Bhadviya, Nano Lett. NALEFD 1530-6984 10.1021/nl904092h 10, 1297 (2010).
-
(2010)
Nano Lett.
, vol.10
, pp. 1297
-
-
Jo, S.1
Chang, T.2
Ebong, I.3
Bhadviya, B.4
-
2
-
-
80053572395
-
-
10.2417/1201011.003396
-
M. Laiho, E. Lehtonen, A. Russell, and P. Dudek, The Neuromorphic Engineer 10.2417/1201011.003396, 1 (2010).
-
(2010)
The Neuromorphic Engineer
, pp. 1
-
-
Laiho, M.1
Lehtonen, E.2
Russell, A.3
Dudek, P.4
-
4
-
-
0015127532
-
-
IECTAF 0018-9324 10.1109/TCT.1971.1083337
-
L. Chua, IEEE Trans. Circuit Theory IECTAF 0018-9324 10.1109/TCT.1971. 1083337 18, 507 (1971).
-
(1971)
IEEE Trans. Circuit Theory
, vol.18
, pp. 507
-
-
Chua, L.1
-
5
-
-
79952950219
-
-
APAMFC 0947-8396 10.1007/s00339-011-6264-9
-
L. Chua, Appl. Phys. A APAMFC 0947-8396 10.1007/s00339-011-6264-9 102, 765 (2011).
-
(2011)
Appl. Phys. A
, vol.102
, pp. 765
-
-
Chua, L.1
-
6
-
-
38349103053
-
-
APPLAB 0003-6951 10.1063/1.2834852
-
W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, F. Chen, and M.-J. Tsai, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2834852 92, 022110 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 022110
-
-
Chang, W.-Y.1
Lai, Y.-C.2
Wu, T.-B.3
Wang, S.-F.4
Chen, F.5
Tsai, M.-J.6
-
7
-
-
40849116615
-
Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures
-
DOI 10.1016/j.tsf.2007.09.050, PII S0040609007016549
-
L. Courtade, C. Turquat, C. Muller, J. G. Lisoni, L. Goux, D. J. Wouters, D. Goguenheim, P. Roussel, and L. Ortega, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2007.09.050 516, 4083 (2008). (Pubitemid 351391878)
-
(2008)
Thin Solid Films
, vol.516
, Issue.12
, pp. 4083-4092
-
-
Courtade, L.1
Turquat, Ch.2
Muller, Ch.3
Lisoni, J.G.4
Goux, L.5
Wouters, D.J.6
Goguenheim, D.7
Roussel, P.8
Ortega, L.9
-
8
-
-
33750428912
-
2/Ru stacked structures
-
DOI 10.1149/1.2353899
-
K. M. Kim and Y.-K. Choi, Electrochem. Solid State Lett. ESLEF6 1099-0062 10.1149/1.2353899 9, G343 (2006). (Pubitemid 44652658)
-
(2006)
Electrochemical and Solid-State Letters
, vol.9
, Issue.12
, pp. 343-346
-
-
Kim, K.M.1
Choi, B.J.2
Koo, B.W.3
Choi, S.4
Jeong, D.S.5
Hwang, C.S.6
-
9
-
-
44849128158
-
-
APPLAB 0003-6951 10.1063/1.2939555
-
S. Kim and Y.-K. Choi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2939555 92, 223508 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 223508
-
-
Kim, S.1
Choi, Y.-K.2
-
10
-
-
31144449823
-
Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications
-
DOI 10.1116/1.1953687
-
J.-W. Park, J.-W. Park, D.-Y. Kim, and J.-K. Lee, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1953687 23, 1309 (2005). (Pubitemid 43126775)
-
(2005)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.23
, Issue.5
, pp. 1309-1313
-
-
Park, J.-W.1
Park, J.-W.2
Kim, D.-Y.3
Lee, J.-K.4
-
11
-
-
50249156872
-
-
in IEEE, Piscataway, NJ
-
K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, in Proceedings of the IEEE International Electron Devices Meeting, IEDM 2007, Washington, DC (IEEE, Piscataway, NJ, 2007), pp. 767-770.
-
(2007)
Proceedings of the IEEE International Electron Devices Meeting, IEDM 2007, Washington, DC
, pp. 767-770
-
-
Tsunoda, K.1
Kinoshita, K.2
Noshiro, H.3
Yamazaki, Y.4
Iizuka, T.5
Ito, Y.6
Takahashi, A.7
Okano, A.8
Sato, Y.9
Fukano, T.10
Aoki, M.11
Sugiyama, Y.12
-
12
-
-
67649538428
-
-
JAPIAU 0021-8979 10.1063/1.3139282
-
Ch. Walczyk, Ch. Wenger, R. Sohal, M. Lukosius, A. Fox, J. Da̧browski, D. Wolansky, B. Tillack, H.-J. Müssig, and T. Schroeder, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3139282 105, 114103 (2009).
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 114103
-
-
Walczyk, Ch.1
Wenger, Ch.2
Sohal, R.3
Lukosius, M.4
Fox, A.5
Da̧browski, J.6
Wolansky, D.7
Tillack, B.8
Müssig, H.-J.9
Schroeder, T.10
-
13
-
-
56749165492
-
-
JESOAN 0013-4651 10.1149/1.3021033
-
J. Wu and R. L. McCreery, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.3021033 156, P29 (2009).
-
(2009)
J. Electrochem. Soc.
, vol.156
, pp. 29
-
-
Wu, J.1
McCreery, R.L.2
-
14
-
-
44349155762
-
-
J.-B. Yun, S. Kim, S. Seo, M.-J. Lee, D. C. Kim, S. E. Ahn, Y. S. Park, J. Kim, and H. Shin, Phys. Status Solidi 1, 280 (2007).
-
(2007)
Phys. Status Solidi
, vol.1
, pp. 280
-
-
Yun, J.-B.1
Kim, S.2
Seo, S.3
Lee, M.-J.4
Kim, D.C.5
Ahn, S.E.6
Park, Y.S.7
Kim, J.8
Shin, H.9
-
15
-
-
67650224663
-
-
JAPIAU 0021-8979 10.1063/1.3153944
-
T. Berzina, A. Smerieri, M. Bernabo, A. Pucci, G. Ruggeri, V. Erokhin, and M. P. Fontana, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3153944 105, 124515 (2009).
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 124515
-
-
Berzina, T.1
Smerieri, A.2
Bernabo, M.3
Pucci, A.4
Ruggeri, G.5
Erokhin, V.6
Fontana, M.P.7
-
16
-
-
34547346804
-
Nonvolatile memory elements based on organic materials
-
DOI 10.1002/adma.200602564
-
J. C. Scott and L. D. Bozano, Adv. Mater. ADVMEW 0935-9648 10.1002/adma.200602564 19, 1452 (2007). (Pubitemid 47153147)
-
(2007)
Advanced Materials
, vol.19
, Issue.11
, pp. 1452-1463
-
-
Scott, J.C.1
Bozano, L.D.2
-
17
-
-
62549138717
-
-
EDLEDZ 0741-3106 10.1109/LED.2008.2012270
-
X. Wang, Y. Chen, H. Xi, H. Li, and D. Dimitar, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2008.2012270 30, 294 (2009).
-
(2009)
IEEE Electron Device Lett.
, vol.30
, pp. 294
-
-
Wang, X.1
Chen, Y.2
Xi, H.3
Li, H.4
Dimitar, D.5
-
18
-
-
53849108825
-
-
PRBMDO 1098-0121 10.1103/PhysRevB.78.113309
-
Y. V. Pershin and M. Di Ventra, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.78.113309 78, 113309 (2008).
-
(2008)
Phys. Rev. B
, vol.78
, pp. 113309
-
-
Pershin, Y.V.1
Di Ventra, M.2
-
19
-
-
79955442181
-
-
in IEEE, Piscataway, NJ
-
W. C. Chien, Y. R. Chen, Y. C. Chen, A. T. H. Chuang, F. M. Lee, Y. Y. Lin, E. K. Lai, Y. H. Shih, K. Y. Hsieh, and C.-Y. Lu, in Proceedings of the IEEE International Electron Devices Meeting, IEDM: Memory Technology - Resistive RAMs, San Francisco, CA (IEEE, Piscataway, NJ, 2010), pp. 19.2.1-19.2.4.
-
(2010)
Proceedings of the IEEE International Electron Devices Meeting, IEDM: Memory Technology - Resistive RAMs, San Francisco, CA
, pp. 1921-1924
-
-
Chien, W.C.1
Chen, Y.R.2
Chen, Y.C.3
Chuang, A.T.H.4
Lee, F.M.5
Lin, Y.Y.6
Lai, E.K.7
Shih, Y.H.8
Hsieh, K.Y.9
Lu, C.-Y.10
-
20
-
-
36249018306
-
Resistive memory switching in epitaxially grown NiO
-
DOI 10.1063/1.2815658
-
S. R. Lee, K. Char, D. C. Kim, R. Jung, S. Seo, X. S. Li, G. S. Park, and I. K. Yoo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2815658 91, 202115 (2007). (Pubitemid 350128910)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.20
, pp. 202115
-
-
Lee, S.R.1
Char, K.2
Kim, D.C.3
Jung, R.4
Seo, S.5
Li, X.S.6
Park, G.-S.7
Yoo, I.K.8
-
21
-
-
70450260461
-
-
JAPIAU 0021-8979 10.1063/1.3253722
-
W. Zhu, T. P. Chen, Z. Liu, M. Yang, Y. Liu, and S. Fung, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3253722 106, 093706 (2009).
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 093706
-
-
Zhu, W.1
Chen, T.P.2
Liu, Z.3
Yang, M.4
Liu, Y.5
Fung, S.6
-
22
-
-
19944434155
-
Reproducible resistance switching in polycrystalline NiO films
-
DOI 10.1063/1.1831560
-
S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1831560 85, 5655 (2004). (Pubitemid 40162553)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.23
, pp. 5655-5657
-
-
Seo, S.1
Lee, M.J.2
Seo, D.H.3
Jeoung, E.J.4
Suh, D.-S.5
Joung, Y.S.6
Yoo, I.K.7
Hwang, I.R.8
Kim, S.H.9
Byun, I.S.10
Kim, J.-S.11
Choi, J.S.12
Park, B.H.13
-
23
-
-
43049126833
-
The missing memristor found
-
DOI 10.1038/nature06932, PII NATURE06932
-
D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 0028-0836 10.1038/nature06932 453, 80 (2008). (Pubitemid 351630336)
-
(2008)
Nature
, vol.453
, Issue.7191
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
24
-
-
67650102619
-
-
ADVMEW 0935-9648 10.1002/adma.200900375
-
R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. ADVMEW 0935-9648 10.1002/adma.200900375 21, 2632 (2009).
-
(2009)
Adv. Mater.
, vol.21
, pp. 2632
-
-
Waser, R.1
Dittmann, R.2
Staikov, G.3
Szot, K.4
-
25
-
-
35748974883
-
Nanoionics-based resistive switching memories
-
DOI 10.1038/nmat2023, PII NMAT2023
-
R. Waser and M. Aono, Nat. Mater. 1476-1122 10.1038/nmat2023 6, 833 (2007). (Pubitemid 350064191)
-
(2007)
Nature Materials
, vol.6
, Issue.11
, pp. 833-840
-
-
Waser, R.1
Aono, M.2
-
26
-
-
57849122145
-
-
0018-9235 10.1109/MSPEC.2008.4687366
-
S. Williams, IEEE Spectrum 0018-9235 10.1109/MSPEC.2008.4687366 45, 24 (2008).
-
(2008)
IEEE Spectrum
, vol.45
, pp. 24
-
-
Williams, S.1
-
27
-
-
46749093701
-
-
1748-3387 10.1038/nnano.2008.160
-
J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 1748-3387 10.1038/nnano.2008.160 3, 429 (2008).
-
(2008)
Nat. Nanotechnol.
, vol.3
, pp. 429
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Williams, R.S.6
-
28
-
-
0003407954
-
-
Springer-Verlag, New York
-
N. Tsuda, K. Nasu, A. Fujimori, and K. Siratori, Electronic Conduction in Oxides (Springer-Verlag, New York, 2000).
-
(2000)
Electronic Conduction in Oxides
-
-
Tsuda, N.1
Nasu, K.2
Fujimori, A.3
Siratori, K.4
-
31
-
-
33646885556
-
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
-
DOI 10.1063/1.2204649
-
D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U-In Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2204649 88, 202102 (2006). (Pubitemid 43781782)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.20
, pp. 202102
-
-
Kim, D.C.1
Seo, S.2
Ahn, S.E.3
Suh, D.-S.4
Lee, M.J.5
Park, B.-H.6
Yoo, I.K.7
Baek, I.G.8
Kim, H.-J.9
Yim, E.K.10
Lee, J.E.11
Park, S.O.12
Kim, H.S.13
Chung, U.-I.14
Moon, J.T.15
Ryu, B.I.16
-
32
-
-
34547912901
-
Reversible resistance switching behaviors of Pt/NiO/Pt structures
-
DOI 10.1143/JJAP.46.5205
-
D.-W. Kim, B. H. Park, R. Jung, and S. Seo, Jpn. J. Appl. Phys. JAPNDE 0021-4922 10.1143/JJAP.46.5205 46, 5205 (2007). (Pubitemid 47252587)
-
(2007)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.46
, Issue.8
, pp. 5205-5207
-
-
Kim, D.-W.1
Park, B.H.2
Jung, R.3
Seo, S.4
-
33
-
-
0942289076
-
Transport in electroceramics: Micro- and nano-structural aspects
-
DOI 10.1016/S0955-2219(03)00507-7
-
J. Maier, J. Eur. Ceram. Soc. JECSER 0955-2219 10.1016/S0955-2219(03) 00507-7 24, 1251 (2004). (Pubitemid 38143723)
-
(2004)
Journal of the European Ceramic Society
, vol.24
, Issue.6
, pp. 1251-1257
-
-
Maier, J.1
-
34
-
-
77958062164
-
-
NALEFD 1530-6984 10.1021/nl1023595
-
R. Malik, D. Burch, M. Bazant, and G. Ceder, Nano Lett. NALEFD 1530-6984 10.1021/nl1023595 10, 4123 (2010).
-
(2010)
Nano Lett.
, vol.10
, pp. 4123
-
-
Malik, R.1
Burch, D.2
Bazant, M.3
Ceder, G.4
-
35
-
-
0033691630
-
-
SSIOD3 0167-2738 10.1016/S0167-2738(00)00629-9
-
H. L. Tuller, Solid State Ionics SSIOD3 0167-2738 10.1016/S0167-2738(00) 00629-9 131, 143 (2000).
-
(2000)
Solid State Ionics
, vol.131
, pp. 143
-
-
Tuller, H.L.1
-
36
-
-
1142299615
-
-
PSSTAW 0079-6786 10.1016/0079-6786(95)00004-E
-
J. Maier, Prog. Solid State Chem. PSSTAW 0079-6786 10.1016/0079-6786(95) 00004-E 23, 171 (1995).
-
(1995)
Prog. Solid State Chem.
, vol.23
, pp. 171
-
-
Maier, J.1
-
38
-
-
0036836993
-
-
MIGIEA 0927-796X 10.1016/S0927-796X(02)00090-6
-
H. Föll, M. Christophersen, J. Carstensen, and G. Hasse, Mater. Sci. Eng., R MIGIEA 0927-796X 10.1016/S0927-796X(02)00090-6 39, 93 (2002).
-
(2002)
Mater. Sci. Eng., R
, vol.39
, pp. 93
-
-
Föll, H.1
Christophersen, M.2
Carstensen, J.3
Hasse, G.4
-
39
-
-
77958112241
-
-
APPLAB 0003-6951 10.1063/1.3503608
-
Y. Jiao, D. S. Koktysh, N. Phambu, and S. M. Weiss, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3503608 97, 153125 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 153125
-
-
Jiao, Y.1
Koktysh, D.S.2
Phambu, N.3
Weiss, S.M.4
-
40
-
-
84884381295
-
-
See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevB.88.075307 for description of circuitry used.
-
-
-
-
41
-
-
84884370074
-
-
See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevB.88.075307 for current-voltage hysteresis measurement of the 44-nm pore size, 20-μm contact separation NiO-PSi device.
-
-
-
-
42
-
-
33746581992
-
Delivery systems for the direct application of siRNAs to induce RNA interference (RNAi) in vivo
-
DOI 10.1155/JBB/2006/71659, PII S111072430671659X
-
A. Aigner, J. Biomed. Biotechnol. 10.1155/JBB/2006/71659 2006, 71659 (2006). (Pubitemid 44147737)
-
(2006)
Journal of Biomedicine and Biotechnology
, vol.2006
, pp. 71659
-
-
Aigner, A.1
-
45
-
-
38749126236
-
Evaluation of the electrical conductivity of nano-porous silicon from photoluminescence and particle size distribution
-
DOI 10.1016/j.mseb.2007.08.019, PII S0921510707004795
-
M. Bouaïcha, M. Khardani, and B. Bessaïs, Mater. Sci. Eng., B 0921-5107 10.1016/j.mseb.2007.08.019 147, 235 (2008). (Pubitemid 351179192)
-
(2008)
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
, vol.147
, Issue.2-3
, pp. 235-238
-
-
Bouaicha, M.1
Khardani, M.2
Bessais, B.3
-
47
-
-
84884407542
-
-
See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevB.88.075307 for derivations of mobility expression.
-
-
-
-
48
-
-
84884379827
-
-
See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevB.88.075307 for comparison of first-, second-, and third-order fits.
-
-
-
-
50
-
-
80053298117
-
-
1936-0851 10.1021/nn202983n
-
T. Chang, S.-H. Jo, and W. Lu, ACS Nano 1936-0851 10.1021/nn202983n 5, 7669 (2011).
-
(2011)
ACS Nano
, vol.5
, pp. 7669
-
-
Chang, T.1
Jo, S.-H.2
Lu, W.3
|