-
1
-
-
0035834415
-
Logic gates and computation from assembled nanowire building blocks
-
Y. Huang, X. Duan, Y. Cui, L.J. Lauhon, K-H. Kim, and C.M. Lieber: Logic gates and computation from assembled nanowire building blocks. Science 294, 1313 (2001).
-
(2001)
Science
, vol.294
, pp. 1313
-
-
Huang, Y.1
Duan, X.2
Cui, Y.3
Lauhon, L.J.4
Kim, K.-H.5
Lieber, C.M.6
-
2
-
-
0037301789
-
Room temperature two-terminal characteristics in silicon nanowires
-
S.F. Hua, W.Z. Wonga, S.S. Liua, Y.C. Wua, C.L. Sunga, and T.Y. Huangb: Room temperature two-terminal characteristics in silicon nanowires. Solid State Commun. 125, 351 (2003).
-
(2003)
Solid State Commun.
, vol.125
, pp. 351
-
-
Hua, S.F.1
Wonga, W.Z.2
Liua, S.S.3
Wua, Y.C.4
Sunga, C.L.5
Huangb, T.Y.6
-
4
-
-
33751122778
-
Vapor-liquid-solid mechanism of single crystal growth
-
R.S. Wagner and W.C. Ellis: Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89 (1964).
-
(1964)
Appl. Phys. Lett.
, vol.4
, pp. 89
-
-
Wagner, R.S.1
Ellis, W.C.2
-
5
-
-
33751431578
-
Beryllium oxide whiskers and platelets
-
P.L. Edwards and R.J. Happel: Beryllium oxide whiskers and platelets. J. Appl. Phys. 33, 943 (1962).
-
(1962)
J. Appl. Phys.
, vol.33
, pp. 943
-
-
Edwards, P.L.1
Happel, R.J.2
-
6
-
-
0032498174
-
A laser ablation method for the synthesis of crystalline semiconductor nanowires
-
A.M. Morales and C.M. Lieber: A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279, 208 (1998).
-
(1998)
Science
, vol.279
, pp. 208
-
-
Morales, A.M.1
Lieber, C.M.2
-
7
-
-
0037912948
-
Growth of silicon nanowires via gold/silane vapor-liquid-solid reaction
-
J. Westwater, D.P. Gosain, S. Tomiya, S. Usui, and H. Ruda: Growth of silicon nanowires via gold/silane vapor-liquid-solid reaction. J. Vac. Sci. Technol., B 15, 554 (1997).
-
(1997)
J. Vac. Sci. Technol., B
, vol.15
, pp. 554
-
-
Westwater, J.1
Gosain, D.P.2
Tomiya, S.3
Usui, S.4
Ruda, H.5
-
8
-
-
1642528452
-
Controlled growth and structures of molecular-scale silicon nanowires
-
Y. Wu, Y. Cui, L. Huynh, C.J. Barrelet, D.C. Bell, and C.M. Lieber: Controlled growth and structures of molecular-scale silicon nanowires. Nano Lett. 4, 433 (2004).
-
(2004)
Nano Lett.
, vol.4
, pp. 433
-
-
Wu, Y.1
Cui, Y.2
Huynh, L.3
Barrelet, C.J.4
Bell, D.C.5
Lieber, C.M.6
-
9
-
-
0037210909
-
Silicon nanowires grown on a preannealed Si substrate
-
X.B. Zeng, Y.Y. Xu, S.B. Zhang, Z.H. Hu, H.W. Diao, Y.Q. Wang, G.L. Kong, and X.B. Liao: Silicon nanowires grown on a preannealed Si substrate. J. Cryst. Growth 247, 13 (2003).
-
(2003)
J. Cryst. Growth
, vol.247
, pp. 13
-
-
Zeng, X.B.1
Xu, Y.Y.2
Zhang, S.B.3
Hu, Z.H.4
Diao, H.W.5
Wang, Y.Q.6
Kong, G.L.7
Liao, X.B.8
-
10
-
-
0035831837
-
Diameter-controlled synthesis of single-crystal silicon nanowires
-
Y. Cui, L.J. Lauhon, M.S. Gudiksen, J. Wang, and C.M. Lieber: Diameter-controlled synthesis of single-crystal silicon nanowires. Appl. Phys. Lett. 78, 2214 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2214
-
-
Cui, Y.1
Lauhon, L.J.2
Gudiksen, M.S.3
Wang, J.4
Lieber, C.M.5
-
11
-
-
21944452128
-
Nanoscale silicon wires synthesized using simple physical evaporation
-
D.P. Yu, Z.G. Bai, Y. Ding, Q.L. Hang, H.Z. Zhang, J.J. Wang, Y.H. Zou, W. Qian, G.C. Xiong, H.T. Zhou, and S.Q. Feng: Nanoscale silicon wires synthesized using simple physical evaporation. Appl. Phys. Lett. 72, 3458 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 3458
-
-
Yu, D.P.1
Bai, Z.G.2
Ding, Y.3
Hang, Q.L.4
Zhang, H.Z.5
Wang, J.J.6
Zou, Y.H.7
Qian, W.8
Xiong, G.C.9
Zhou, H.T.10
Feng, S.Q.11
-
12
-
-
0001190818
-
Si nanowires grown from silicon oxide
-
N. Wang, Y.H. Tang, Y.F. Zhang, C.S. Lee, I. Bello, and S.T. Lee: Si nanowires grown from silicon oxide. Chem. Phys. Lett. 299, 237 (1999).
-
(1999)
Chem. Phys. Lett.
, vol.299
, pp. 237
-
-
Wang, N.1
Tang, Y.H.2
Zhang, Y.F.3
Lee, C.S.4
Bello, I.5
Lee, S.T.6
-
13
-
-
0034140645
-
The growth mechanism of silicon nanowires and their quantum confinement effect
-
S.Q. Feng, D.P. Yu, H.Z. Zhang, Z.G. Bai, and Y. Ding: The growth mechanism of silicon nanowires and their quantum confinement effect. J. Cryst. Growth 209, 513 (2000).
-
(2000)
J Cryst. Growth
, vol.209
, pp. 513
-
-
Feng, S.Q.1
Yu, D.P.2
Zhang, H.Z.3
Bai, Z.G.4
Ding, Y.5
-
14
-
-
0032494919
-
Dependence of the silicon nanowire diameter on ambient pressure
-
H.Z. Zhang, D.P. Yu, Y. Ding, Z.G. Bai, Q.L. Hang, and S.Q. Feng: Dependence of the silicon nanowire diameter on ambient pressure. Appl. Phys. Lett. 73, 3396 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3396
-
-
Zhang, H.Z.1
Yu, D.P.2
Ding, Y.3
Bai, Z.G.4
Hang, Q.L.5
Feng, S.Q.6
-
15
-
-
0037971507
-
Rational growth of highly oriented amorphous silicon nanowire films
-
X. Chen, Y. Xing, J. Xu, J. Xiang, and D. Yu: Rational growth of highly oriented amorphous silicon nanowire films. Chem. Phys. Lett. 374, 626 (2003).
-
(2003)
Chem. Phys. Lett.
, vol.374
, pp. 626
-
-
Chen, X.1
Xing, Y.2
Xu, J.3
Xiang, J.4
Yu, D.5
-
16
-
-
0001236599
-
Growth of amorphous silicon nanowires via a solid-liquid-solid mechanism
-
H.F. Yan, Y.J. Xing, Q.L. Hang, D.P. Yu, Y.P. Wang, J. Xu, Z.H. Xi, and S.Q. Feng: Growth of amorphous silicon nanowires via a solid-liquid-solid mechanism. Chem. Phys. Lett. 323, 224 (2000).
-
(2000)
Chem. Phys. Lett.
, vol.323
, pp. 224
-
-
Yan, H.F.1
Xing, Y.J.2
Hang, Q.L.3
Yu, D.P.4
Wang, Y.P.5
Xu, J.6
Xi, Z.H.7
Feng, S.Q.8
-
18
-
-
18844446933
-
Spontaneous nickel monosilicide nanowire formation by metal induced growth
-
J. Kim and W.A. Anderson: Spontaneous nickel monosilicide nanowire formation by metal induced growth. Thin Solid Films 483, 60 (2005).
-
(2005)
Thin Solid Films
, vol.483
, pp. 60
-
-
Kim, J.1
Anderson, W.A.2
-
21
-
-
0041917723
-
Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction
-
P. Gergaud, M. Megdiche, O. Thomas, and B. Chenevier: Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction. Appl. Phys. Lett. 83, 1334 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 1334
-
-
Gergaud, P.1
Megdiche, M.2
Thomas, O.3
Chenevier, B.4
-
23
-
-
0018999399
-
Interface metallurgy and electronic properties of silicides
-
G. Ottaviani: Interface metallurgy and electronic properties of silicides. J. Vac. Sci. Technol. 18, 924 (1981).
-
(1981)
J. Vac. Sci. Technol.
, vol.18
, pp. 924
-
-
Ottaviani, G.1
-
24
-
-
36449004575
-
Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films
-
C. Hayzelden and J.L. Batstone: Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films. J. Appl. Phys. 73, 8279 (1993).
-
(1993)
J. Appl. Phys.
, vol.73
, pp. 8279
-
-
Hayzelden, C.1
Batstone, J.L.2
-
25
-
-
24344496611
-
Self-assembled nanobridge formation and spontaneous growth of metal-induced nanowires
-
J. Kim, W.A. Anderson, Y-J. Song, and G.B. Kim: Self-assembled nanobridge formation and spontaneous growth of metal-induced nanowires. Appl. Phys. Lett. 86, 253101 (2005).
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 253101
-
-
Kim, J.1
Anderson, W.A.2
Song, Y.-J.3
Kim, G.B.4
-
26
-
-
33746908523
-
Driect electrical measurement of the self-assembled nickel silicide nanowire
-
J. Kim and W.A. Anderson: Driect electrical measurement of the self-assembled nickel silicide nanowire. Nano Lett. 6, 1356 (2006).
-
(2006)
Nano Lett.
, vol.6
, pp. 1356
-
-
Kim, J.1
Anderson, W.A.2
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