Epitaxial Si punch-through based selector for bipolar RRAM

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2012, Pages 115-116

  Bafna, P ^a   Karkare, P ^a   Srinivasan, S ^a,b   Chopra, S ^b   Lashkare, S ^a   Kim, Y ^b   Kuppurao, S ^b   Lodha, S ^a   Ganguly, U ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT RATIOS; EPITAXIAL SI; EPITAXIAL SILICON; HIGH CURRENT DENSITIES; HIGH DENSITY; IN-SITU; JUNCTION DEVICES; LOW POWER; NON-VOLATILE MEMORIES; ON-CURRENTS; ON/OFF CURRENT RATIO; PUNCH-THROUGH; RESISTIVE RAMS; TCAD SIMULATION;

DATA STORAGE EQUIPMENT;

EPITAXIAL GROWTH;

EID: 84866950582     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2012.6256979     Document Type: Conference Paper

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