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Applied Physics Express

Volumn 6, Issue 9, 2013, Pages

High-quality AlN layer homoepitaxially grown on nitrided a-plane sapphire using a Ga-Al flux

(6) Adachi, Masayoshi a Tsuda, Kenji a Sugiyama, Masashi b Iida, Junji b Tanaka, Akikazu b Fukuyama, Hiroyuki a

a TOHOKU UNIVERSITY (Japan)

b SUMITOMO METAL MINING CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE SAPPHIRE; C-PLANE SAPPHIRE SUBSTRATES; CONVERGENT-BEAM ELECTRON DIFFRACTION; FLUX METHODS; HIGH QUALITY; POLARITY INVERSION; ROTATIONAL DOMAINS; X RAY ROCKING CURVE;

EDGE DISLOCATIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 84883689185 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.7567/APEX.6.091001 Document Type: Article

Times cited : (20)

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