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Volumn , Issue , 2013, Pages 641-647

Characterization of plasticity and stresses in TSV structures in stacked dies using synchrotron x-ray microdiffraction

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT OBSERVATIONS; HIGH-RESOLUTION MAPPING; STRESS AND DEFORMATION; STRESS CHARACTERISTICS; SYNCHROTRON MEASUREMENTS; THERMOMECHANICAL MODEL; THROUGH SILICON VIAS; X RAY MICRODIFFRACTION;

EID: 84883337450     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2013.6575641     Document Type: Conference Paper
Times cited : (9)

References (14)
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  • 2
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  • 3
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    • Van Olmen, J.1
  • 5
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    • Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k/metal gate CMOS performance
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  • 6
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    • S.K. Ryu et al., "Effect of Thermal Stresses on Carrier Mobility and Keep-Out Zone Around Through-Silicon Vias for 3-D Integration", IEEE Trans. Device and Materials Reliability, 12(2), pp. 255-262 (2012)
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    • Ryu, S.K.1
  • 7
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  • 8
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    • Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects
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  • 9
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    • Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique
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  • 10
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  • 11
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  • 13
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  • 14
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.