Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy

Applied Physics Letters

Volumn 98, Issue 23, 2011, Pages

  Kwon, W S ^a   Alastair, D T ^a   Teo, K H ^a   Gao, S ^a   Ueda, T ^b   Ishigaki, T ^b   Kang, K T ^b   Yoo, W S ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b WaferMasters Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT GEOMETRY; INITIAL STRESS STATE; MICRO RAMAN SPECTROSCOPY; MULTIWAVELENGTH; STRESS DEVELOPMENT; STRESS EVOLUTION; STRESS INTERACTION; THERMAL ANNEALING PROCESS; THERMAL-ANNEALING; THREE-DIMENSIONAL STRESS;

RAMAN SCATTERING; RAMAN SPECTROSCOPY;

ANNEALING;

EID: 79959357996     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3596443     Document Type: Article

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