Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits

Microelectronics Reliability

Volumn 52, Issue 3, 2012, Pages 530-533

  Budiman, A S ^a   Shin, H A S ^b   Kim, B J ^b   Hwang, S H ^b   Son, H Y ^c   Suh, M S ^c   Chung, Q H ^c   Byun, K Y ^c   Tamura, N ^d   Kunz, M ^d   Joo, Y C ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b Seoul National University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; DEVICE PERFORMANCE; HYDROSTATIC STRESS; IN-SITU MEASUREMENT; INTEGRATION ISSUES; MECHANICAL STRESS; SYNCHROTRON X RAYS; THERMAL-ANNEALING;

INTEGRATED CIRCUITS; SILICON; X RAY DIFFRACTION;

STRESSES;

EID: 84857373553     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.10.016     Document Type: Article

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