Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performance

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Mercha, A ^a   Van Der Plas, G ^a   Moroz, V ^a   De Wolf, I ^a   Asimakopoulos, P ^e   Minas, N ^a   Domae, S ^b   Perry, D ^c   Choi, M ^a   Redolfi, A ^a   Okoro, C ^a   Yang, Y ^a   Van Olmen, J ^a   Thangaraju, S ^a   Sabuncuoglu Tezcan, D ^a   Soussan, P ^a   Cho, J H ^d   Yakovlev, A ^e   Marchal, P ^a   Travaly, Y ^a   Beyne, E ^a   Biesemans, S ^a   Swinnen, B ^a   more..

^a IMEC   (Belgium)

^b Panasonic   (Belgium)

^c QUALCOMM INC   (United States)

^d Samsung   (Belgium)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; 3D FLOW; COMPREHENSIVE ANALYSIS; COMPREHENSIVE STUDIES; EXPERIMENTAL ASSESSMENT; FRONT-END DEVICES; INDUCED STRESS; KEEP-OUT-ZONE; KEY CONSTRAINTS; MECHANICAL STRESS; METAL GATE; POWER EFFICIENCY; SILICON AREA; STRESS DISTRIBUTION; STRESS-INDUCED; THEORETICAL APPROACH; THROUGH SILICON VIAS;

DIGITAL CIRCUITS; ELECTRON DEVICES; STRESS CONCENTRATION; THREE DIMENSIONAL;

DIGITAL DEVICES;

EID: 79951833703     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703278     Document Type: Conference Paper

References (6)

1. P. Morrow et al., Design and fabrication of 3D microprocessors, MRSS Proceedings, 970, 2007.
2. A. Mercha et al., Impact of thinning and through silicon via proximity on HKMG first CMOS performance, VLSI technology, 109-110, 2010.
3. I. De Wolf, Experimental validation of mechanical stress models by micro-Raman spectroscopy, J.Appl.Phy. 7148-7156, 1996.
4. C. Okoro et al., Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias using μ-Raman Spectroscopy, IITC, 16-18, 2008.
5. Fammos Manual, v.2009.09, Synopsys, 2009.
6. C. Smith, Piezoresistance Effect in Ge and Si ,Phys Rev., vol. 94, pp. 42-49, 1954.