Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2012, Pages 333-336

  Jin, Donghyun ^a   Del Alamo, Jesús A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

border traps; dynamic ON resistance; GaN; HEMT

Indexed keywords

ALGAN; BORDER TRAPS; ELECTRON DETRAPPING; GAN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH-VOLTAGES; ON-RESISTANCE; POWER SWITCHING DEVICES; THERMALLY ACTIVATED; TIME SPAN; TIME TRANSIENT; TIME-SCALES; TRAPPED ELECTRONS; TUNNELING PROCESS;

GALLIUM NITRIDE; TRANSIENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84864756218     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2012.6229089     Document Type: Conference Paper

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