A1GaN photodetectors prepared on Si substrates

IEEE Electron Device Letters

Volumn 28, Issue 4, 2007, Pages 264-266

  Chiou, Y Z ^a   Lin, Y C ^b   Wang, C K ^c  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c EPISTAR CORPORATION   (Taiwan)

Author keywords

A1GaN; Metal semiconductor metal (MSM); Noise; Photodetectors (PDs); Si substrates

Indexed keywords

A1GAN; APPLIED BIAS; METAL SEMICONDUCTOR METAL PHOTODETECTOR; METAL-SEMICONDUCTOR-METAL (MSM); NOISE; NOISE EQUIVALENT POWER; PEAK WAVELENGTH; REJECTION RATIOS; SI SUBSTRATES; SILICON SUBSTRATES; ULTRA-VIOLET; ALGAN; METAL SEMICONDUCTOR METAL; PHOTODETECTORS (PDS);

ALUMINUM; METALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SUBSTRATES;

EID: 34547746582     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.893224     Document Type: Article

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